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NSBC123TPDP6T5G

P1-P3P4-P6
NSBC123TPDP6
http://onsemi.com
4
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC123TPDP6
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100101
10
100
1000
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.2
1.6
2.0
2.01.6 2.41.20.80.40
0.1
1
10
100
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 V
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
0.01
NSBC123TPDP6
http://onsemi.com
5
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC123TPDP6
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
100101
1
100
1000
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
1
2
3
5
6
7
2310
0.1
1
10
100
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
0.001
1
10
4
0.01
NSBC123TPDP6
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
DIM MIN NOM MAX
MILLIMETERS
A 0.34 0.37 0.40
b 0.10 0.15 0.20
C 0.07 0.12 0.17
D 0.95 1.00 1.05
E 0.75 0.80 0.85
e 0.35 BSC
0.95 1.00 1.05
H
E
E
D
C
A
H
E
123
456
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
X
Y
TOP VIEW
SIDE VIEW
e
b
X0.08
6X
Y
BOTTOM VIEW
6X
0.35
PITCH
1.20
0.20
DIMENSIONS: MILLIMETERS
RECOMMENDED
PACKAGE
OUTLINE
MOUNTING FOOTPRINT
L 0.19 REF
L2 0.05 0.10 0.15
L
6X
L2
6X
6X
0.35
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P1-P3P4-P6

NSBC123TPDP6T5G

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Description:
Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
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New from this manufacturer.
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