HBAT-5400-TR1G Datasheet HBAT-540C-BLKG, HBAT-540C-TR2G, HBAT-5400-TR1G | P7-P8

Figure 7. Forward Current vs. Forward Voltage at 25°C.

Because the automatic, pick-and-place equipment used

to assemble these products selects dice from adjacent

sites on the wafer, the two diodes which go into the HBAT-

5402 or HBAT-540C (series pair) are closely matched—

without the added expense of testing and binning.

Current Handling in Clipping/Clamping Circuits

The purpose of a clipping/clamping diode is to handle

high currents, protecting delicate circuits downstream

of the diode. Current handling capacity is determined

by two sets of characteristics, those of the chip or device

itself and those of the package into which it is mounted.

Maximum reliability is obtained in a Schottky diode

when the steady state junction temperature is main-

tained at or below 150°C, although brief excursions to

higher junction temperatures can be tolerated with no

signiﬁ cant impact upon mean-time-to-failure, MTTF. In

order to compute the junction temperature, Equations

(1) and (3) below must be simultaneously solved.

– FORWARD CURRENT (mA)

– FORWARD VOLTAGE (V)

.01

300

100

0 0.1 0.30.2 0.50.4 0.6

HSMS-270x

HBAT-540x

current

limiting

pull-down

(or pull-up)

long cross-site cable

noisy data-spikes

voltage limited to

Vs + Vd

0V – Vd

Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit.

Consider the circuit shown in Figure 8, in which two

Schottky diodes are used to protect a circuit from noise

spikes on a stream of digital data. The ability of the diodes

to limit the voltage spikes is related to their ability to sink

the associated current spikes. The importance of current

handling capacity is shown in Figure 9, where the forward

voltage generated by a forward current is compared in

two diodes. The ﬁ rst is a conventional Schottky diode of

the type generally used in RF circuits, with an R

of 7.7Ω.

The second is a Schottky diode of identical characteris-

tics, save the R

of 1.0 Ω. For the conventional diode, the

relatively high value of R

causes the voltage across the

diode’s terminals to rise as current increases. The power

dissipated in the diode heats the junction, causing R

climb, giving rise to a runaway thermal condition. In the

second diode with low R

, such heating does not take

place and the voltage across the diode terminals is main-

tained at a low limit even at high values of current.

0 0.1 0.2 0.3 0.50.4

– FORWARD VOLTAGE (V)

– FORWARD CURRENT (mA)

= 7.7

= 1.0

= I

e –1

11600 (V

– I

)

(1)

= I

298

–4060

–

(2)

= V

+ T

(3)

where:

= forward current

= saturation current

= forward voltage

= series resistance

= junction temperature

= saturation current at 25°C

n = diode ideality factor

= thermal resistance from junction to case

(diode lead)

= θ

package

+ θ

chip

= ambient (diode lead) temperature

Equation (1) describes the forward V-I curve of a Schottky

diode. Equation (2) provides the value for the diode’s sat-

uration current, which value is plugged into (1). Equation

(3) gives the value of junction temperature as a function

of power dissipated in the diode and ambient (lead)

temperature.

Figure 9. Comparison of Two Diodes.

Part Number Ordering Information

Part Number No. of Devices Container

HBAT-5400-BLKG 100 Antistatic Bag

HBAT-5400-TR1G 3,000 7" Reel

HBAT-5400-TR2G 10,000 13" Reel

HBAT-5402-BLKG 100 Antistatic Bag

HBAT-5402-TR1G 3,000 7" Reel

HBAT-5402-TR2G 10,000 13" Reel

HBAT-540B-BLKG 100 Antistatic Bag

HBAT-540B-TR1G 3,000 7" Reel

HBAT-540B-TR2G 10,000 13" Reel

HBAT-540C-BLKG 100 Antistatic Bag

HBAT-540C-TR1G 3,000 7" Reel

HBAT-540C-TR2G 10,000 13" Reel

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.

AV02-1394EN - January 7, 2010

The key factors in these equations are: R

, the series resis-

tance of the diode where heat is generated under high

current conditions; θ

chip

, the chip thermal resistance of

the Schottky die; and θ

package

, or the package thermal

resistance.

for the HBAT-540x family of diodes is typically 2.4Ω,

other than the HSMS-270x family, this is the lowest of

any Schottky diode available. Chip thermal resistance is

typically 40°C/W; the thermal resistance of the iron-alloy-

leadframe, SOT-23 package is typically 460°C/W; and the

thermal resistance of the copper-leadframe, SOT-323

package is typically 110°C/W. The impact of package

thermal resistance on the current handling capability

of these diodes can be seen in Figures 3 and 4. Here the

computed values of junction temperature vs. forward

current are shown for three values of ambient tempera-

ture. The SOT-323 products, with their copper leadframes,

can safely handle almost twice the current of the larger

SOT-23 diodes. Note that the term “ambient temperature”

refers to the temperature of the diode’s leads, not the air

around the circuit board. It can be seen that the HBAT-

540B and HBAT-540C products in the SOT-323 package

will safely withstand a steady-state forward current of 330

mA when the diode’s terminals are maintained at 75°C.

For pulsed currents and transient current spikes of less

than one microsecond in duration, the junction does

not have time to reach thermal steady state. Moreover,

the diode junction may be taken to temperatures higher

than 150°C for short timeperiods without impacting

device MTTF. Because of these factors, higher currents

can be safely handled. The HBAT-540x family has the

second highest current handling capability of any Avago

diode, next to the HSMS-270x series.

P1-P3 P4-P6 P7-P8

HBAT-5400-TR1G

Mfr. #:

Buy HBAT-5400-TR1G

Manufacturer:

Broadcom / Avago

Description:

Schottky Diodes & Rectifiers 220mA 250mW Single

Lifecycle:

New from this manufacturer.

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HBAT-5400-TR1G

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