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74HC3G07DC,125

P1-P3P4-P6P7-P9P10-P12P13-P15
74HC_HCT3G07 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 16 December 2013 3 of 14
NXP Semiconductors 74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
6.2 Pin description
7. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP8 package: above 55 C the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110 C the value of P
tot
derates linearly with 8 mW/K.
For XSON8 package: above 118 C the value of P
tot
derates linearly with 7.8 mW/K.
Table 3. Pin description
Symbol Pin Description
1A, 2A, 3A 1, 3, 6 data input
GND 4 ground (0 V)
1Y, 2Y, 3Y 7, 5, 2 data output
V
CC
8 supply voltage
Table 4. Function table
[1]
Input nA Output nY
LL
HZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 7.0 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
CC
+ 0.5 V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V
[1]
20 - mA
V
O
output voltage active mode
[1]
0.5 V
CC
+ 0.5 V
high-impedance mode
[1]
0.5 7.0 V
I
O
output current V
O
= 0.5 V to 7.0 V
[1]
25 - mA
I
CC
supply current
[1]
-50mA
I
GND
ground current
[1]
50 - mA
T
stg
storage temperature 65 +150 C
P
D
dynamic power dissipation T
amb
= 40 C to +125 C
[2]
-300mW
74HC_HCT3G07 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 16 December 2013 4 of 14
NXP Semiconductors 74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
9. Recommended operating conditions
10. Static characteristics
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74HC3G07 74HCT3G07 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - 6.0 0 - 5.5 V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise
and fall rate
V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
C.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
74HC3G07
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.33 - 0.4 V
I
I
input leakage
current
V
I
=V
CC
or GND; V
CC
=6.0V - - 0.1 - 1.0 A
I
LO
output leakage
current
V
I
=V
IH
; V
O
=V
CC
or GND - - 5.0 - 10 A
I
CC
supply current per input pin; V
CC
=6.0V;
V
I
=V
CC
or GND; I
O
=0A;
--10 - 20A
C
I
input capacitance - 1.5 - - - pF
74HC_HCT3G07 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 16 December 2013 5 of 14
NXP Semiconductors 74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
[1] Typical values are measured at T
amb
=25C.
11. Dynamic characteristics
74HCT3G07
V
IH
HIGH-level input
voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
V
IL
LOW-level input
voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
I
input leakage
current
V
I
=V
CC
or GND; V
CC
=5.5V - - 1.0 - 1.0 A
I
LO
output leakage
current
V
I
=V
IH
; V
O
=V
CC
or GND - - 5.0 - 10 A
I
CC
supply current per input pin; V
CC
=5.5V;
V
I
=V
CC
or GND; I
O
=0A;
--10 - 20A
I
CC
additional supply
current
per input; V
CC
= 4.5 V to 5.5 V;
V
I
=V
CC
2.1 V; I
O
=0A
- - 375 - 410 A
C
I
input capacitance - 1.5 - - - pF
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
C.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); all typical values are measured at T
amb
=25
C; for test circuit see Figure 7.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
74HC3G07
t
PZL
OFF-state to LOW
propagation delay
nA to nY; see Figure 6
V
CC
= 2.0 V - 25 95 - 125 ns
V
CC
= 4.5 V - 9 19 - 25 ns
V
CC
= 6.0 V - 7 16 - 20 ns
t
PLZ
LOW to OFF-state
propagation delay
nA to nY; see Figure 6
V
CC
= 2.0 V - 25 95 - 125 ns
V
CC
= 4.5 V - 11 23 - 30 ns
V
CC
= 6.0 V - 10 23 - 26 ns
t
THL
HIGH to LOW output
transition time
nY; see Figure 6
V
CC
= 2.0 V - 18 95 - 125 ns
V
CC
= 4.5 V - 6 19 - 25 ns
V
CC
= 6.0 V - 5 16 - 20 ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
[1]
-4- - -pF
P1-P3P4-P6P7-P9P10-P12P13-P15

74HC3G07DC,125

Mfr. #:
Buy 74HC3G07DC,125
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers TRIPLE BUFFER
Lifecycle:
New from this manufacturer.
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