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ATF-36077-STR

P1-P3P4-P4
ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Ampliers
Pin Conguration
77 Package
ATF-36077 fig 1
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
8 16 20
1.2
0.8
0.4
4
12
Ga
ASSOCIATED GAIN (dB)
NF
10
15
20
25
[1]
Note: 1.
See Noise Parameter Table.
Description
Avago Technologies' ATF-36077 is an ultra-low-noise Pseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise gures of 0.5 dB, or typical 4 GHz noise gures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input impedance match, making the design of
broadband low noise ampliers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the rst stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise ampliers operating
in the 2-18 GHz frequency range.
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for V
DS
= 1.5 V, I
D
= 10 mA.
1
GATE
3
DRAIN
2 SOURCE
4 SOURCE
360
2
ATF-36077 Electrical Specications,
T
C
= 25°C, Z
O
= 50 Ω, V
ds
= 1.5 V, I
ds
= 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure
[1]
f = 12.0 GHz dB 0.5 0.6
G
A
Gain at NF
[1]
f = 12.0 GHz dB 11.0 12.0
g
m
Transconductance V
DS
= 1.5 V, V
GS
= 0 V mS 50 55
I
dss
Saturated Drain Current V
DS
= 1.5 V, V
GS
= 0 V mA 15 25 45
V
p 10 %
Pinch-o Voltage V
DS
= 1.5 V, I
DS
= 10% of I
dss
V -1.0 -0.35 -0.15
Note:
1. Measured in a xed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
DS
Drain – Source Voltage V +3
V
GS
Gate – Source Voltage V -3
V
GD
Gate-Drain Voltage V -3.5
I
D
Drain Current mA I
dss
P
T
Total Power Dissipation
[3]
mW 180
P
in max
RF Input Power dBm +10
T
ch
Channel Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
ATF-36077 Characterization Information,
T
C
= 25°C, Z
O
= 50 Ω, V
ds
= 1.5 V, I
ds
= 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Typ.
NF Noise Figure (Tuned Circuit) f = 4 GHz dB 0.3
[2]
f = 12 GHz dB 0.5
G
A
Gain at Noise Figure (Tuned Circuit) f = 4 GHz dB 17
f = 12 GHz dB 12
S
12 o
Reverse Isolation f = 12 GHz, V
DS
= 1.5 V, V
GS
= -2 V dB 14
P
1dB
Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
f = 12 GHz dBm 5
V
GS 10 mA
Gate to Source Voltage for I
DS
= 10 mA V
DS
= 1.5 V V -0.2
Note:
2. See noise parameter table.
Thermal Resistance
[2,3]
: θ
ch-c
= 60°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Measured at P
diss
= 15 mW and T
ch
= 100°C.
3. Derate at 16.7 mW/°C for T
C
> 139°C.
3
ATF-36077 Typical Scattering Parameters,
Common Source, Z
O
= 50 Ω, V
DS
= 1.5 V, I
D
= 10 mA
Freq. S
11
S
21
S
12
S
22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 0.99 -17 14.00 5.010 163 -36.08 0.016 78 0.60 -14
2.0 0.97 -33 13.81 4.904 147 -30.33 0.030 66 0.59 -28
3.0 0.94 -49 13.53 4.745 132 -27.25 0.043 54 0.57 -41
4.0 0.90 -65 13.17 4.556 116 -25.32 0.054 43 0.55 -54
5.0 0.86 -79 12.78 4.357 102 -24.04 0.063 33 0.53 -66
6.0 0.82 -93 12.39 4.162 88 -23.17 0.069 24 0.50 -78
7.0 0.78 -107 12.00 3.981 75 -22.58 0.074 16 0.48 -89
8.0 0.75 -120 11.64 3.820 62 -22.17 0.078 8 0.46 -99
9.0 0.72 -133 11.32 3.682 49 -21.90 0.080 1 0.44 -109
10.0 0.69 -146 11.04 3.566 37 -21.71 0.082 -6 0.42 -119
11.0 0.66 -159 10.81 3.473 25 -21.57 0.083 -13 0.40 -129
12.0 0.63 -172 10.63 3.401 13 -21.44 0.085 -19 0.38 -139
13.0 0.61 175 10.50 3.349 1 -21.32 0.086 -25 0.37 -149
14.0 0.60 161 10.41 3.315 -12 -21.19 0.087 -32 0.35 -160
15.0 0.58 147 10.36 3.296 -24 -21.04 0.089 -39 0.33 -171
16.0 0.57 131 10.34 3.289 -37 -20.87 0.091 -47 0.31 177
17.0 0.56 114 10.34 3.289 -50 -20.69 0.092 -55 0.29 164
18.0 0.57 97 10.35 3.291 -64 -20.53 0.094 -65 0.26 148
ATF-36077 Typical “O ” Scattering Parameters,
Common Source, Z
O
= 50 Ω, V
DS
= 1.5 V, I
D
= 0 mA, V
GS
= -2 V
Freq. S
11
S
21
S
21
S
22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
11.0 0.96 -139 -14.2 0.19 -43 -14.2 0.19 -43 0.97 -125
12.0 0.95 -152 -14.0 0.20 -56 -14.0 0.20 -56 0.97 -137
13.0 0.94 -166 -13.8 0.20 -69 -13.8 0.20 -68 0.96 -149
P1-P3P4-P4

ATF-36077-STR

Mfr. #:
Buy ATF-36077-STR
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs High Frequency
Lifecycle:
New from this manufacturer.
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