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NB3M8302CDG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 3
1 Publication Order Number:
NB3M8302C/D
NB3M8302C
3.3 V 200 MHz 1:2
LVCMOS/LVTTL Low Skew
Fanout Buffer
Description
The NB3M8302C is 1:2 fanout buffer with LVCMOS/LVTTL input
and output. The device supports the core supply voltage of 3.3 V (V
DD
pin) and output supply voltage of 2.5 V or 3.3 V (V
DDO
pin). The
V
DDO
pin powers the two single ended LVCMOS/LVTTL outputs.
The NB3M8302C is Form, Fit and Function (pin to pin) compatible
to ICS8302 and ICS8302I. The NB3M8302C is qualified for industrial
operating temperature range.
Features
• Input Clock Frequency up to 200 MHz
• Low Output to Output Skew: 25 ps typical
• Low Part to Part Skew: 250 ps typical
• Low Additive RMS Phase Jitter
• Input Clock Accepts LVCMOS/ LVTTL Levels
• Operating Voltage:
♦ Core Supply: V
DD
= 3.3 V ±5%
♦ Output Supply: V
DDO
= 3.3 V ±5% or 2.5 V ±5%
• Operating Temperature Range:
♦ Industrial: −40°C to +85°C
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Block Diagram
MARKING
DIAGRAMS*
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
SOIC−8
D SUFFIX
CASE 751
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
www.onsemi.com
8302C
ALYWG
G
1
8
(Note: Microdot may be in either location)
1
8
NB3M8302C
www.onsemi.com
2
Figure 2. Pin Configuration (Top View)
Table 1. PIN DESCRIPTION
Pin Number Name Type Description
1, 6 VDDO Output Power Clock output Supply pin.
2 VDD Input and Core Power Input and Core Supply pin.
3 CLK LVCMOS/LVTTL Input Clock Input. Internally pull−down.
4, 7 GND Ground Supply Ground.
5 Q1 LVCMOS/LVTTL Output LVCMOS/LVTTL Clock output.
8 Q0 LVCMOS/LVTTL Output LVCMOS/LVTTL Clock output.
Table 2. MAXIMUM RATINGS
Symbol Parameter Condition Min Max Unit
V
DD,
V
DDO
Power Supply − 4.6 V
V
I
Input Voltage −0.5 VDD + 0.5 V V
T
stg
Storage Temperature −65 +150
_C
q
JA
Thermal Resistance (Junction to Ambient)
SOIC−8
0 lfpm
500 lfpm
80
55
_C/W
q
JC
Thermal Resistance (Junction to Case)
(Note 1)
12−17
_C/W
T
sol
Wave Solder 3 sec 265
_C
MSL Moisture Sensitivity
SOIC−8
Indefinite Time Out of Drypack
(Note 2) Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. JEDEC standard multilayer board – 2S2P (2 signal, 2 power)
2. For additional information, see Application Note AND8003/D.
NB3M8302C
www.onsemi.com
3
Table 3. DC OPERATING CHARACTERISTICS
(V
DD
= V
DDO
= 3.3 V±5%, V
DD
= 3.3 V±5%, V
DDO
= 2.5 V±5%; T
A
= −40°C to +85°C)
Symbol
Parameter Condition Min Typ Max Unit
R
IN
Input Pull−down Resistor (CLK Pin) 51
kW
C
IN
Input Capacitance 4 pF
R
OUT
Output Impedance (Note 3) 5 7 12
W
C
PD
Power Dissipation Capacitance (per output)
V
DD
= V
DDO
= 3.465 V 22
pF
V
DD
= 3.465 V, V
DDO
= 2.625 V 16
V
DD
Core Supply Voltage 3.135 3.3 3.465 V
I
IH
Input High Current V
IN
= V
DD
= 3.465 V 150
mA
I
IL
Input Low Current V
DD
3.465 V, V
IN
= 0.0 V −0.5
mA
3. Outputs terminated with 50 W to V
DDO
/2. See Figure 4 for supply considerations.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. DC OPERATING CHARACTERISTICS (T
A
= −40°C to +85°C)
Symbol
Parameter Condition Min Max Unit
V
DD
= 3.3 V+5%, V
DDO
= 2.5 V+5%
V
DDO
Output Supply Voltage 2.375 2.625 V
V
OH
Output HIGH Voltage
I
OH
= −16 mA 2.1
V
I
OH
= −100 mA
2.2
50 W to V
DDO
/2
1.8
V
OL
Output LOW Voltage
I
OL
= 16 mA 0.15
V
I
OL
= 100 mA
0.2
50 W to V
DDO
/2
0.5
V
DD
= V
DDO
= 3.3 V+5%
V
DDO
Output Supply Voltage 3.135 3.465 V
V
OH
Output HIGH Voltage
I
OH
= −16 mA 2.9
V
I
OH
= −100 mA
2.9
50 W to V
DDO
/2
2.6
V
OL
Output LOW Voltage
I
OL
= 16 mA 0.15
V
I
OL
= 100 mA
0.2
50 W to V
DDO
/2
0.5
Table 5. DC OPERATING CHARACTERISTICS (T
A
= −40°C to +85°C; V
DD
= V
DDO
= 3.3 V±5%, V
DD
= 3.3 V±5%, V
DDO
= 2.5
V±5%)
Symbol
Parameter Condition Min Max Unit
I
DD
Quiescent Power Supply Current No Load 13 mA
I
DDO
Quiescent Power Supply Current No Load 4 mA
V
IH
Input HIGH Voltage 2 V
DD
+ 0.3 V
V
IL
Input LOW Voltage −0.3 1.3 V
P1-P3P4-P6

NB3M8302CDG

Mfr. #:
Buy NB3M8302CDG
Manufacturer:
ON Semiconductor
Description:
Clock Buffer 3.3V 200MHZ 1:2 LVCMOS/LV
Lifecycle:
New from this manufacturer.
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