ZTX549STZ Datasheet ZTX549, ZTX549STZ, ZTX549STOB | P1-P3

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1  MARCH 94

FEATURES

* 30 Volt V

CEO

* 1 Amp continuous current

*P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-35 V

Collector-Emitter Voltage V

CEO

-30 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-2 A

Continuous Collector Current I

C

-1 A

Power Dissipation: at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-35 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-30 V I

C

=-10mA

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-5 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-0.1

-10

µA

V

CB

=-30V

V

CB

=-30V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

-0.1

µA

V

EB

=-4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-0.25

-0.50

-0.75

V

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

ZTX549A -0.30 V I

C

=-100mA, I

B

=-1mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.9 -1.25 V I

C

=-1A, I

B

=-100mA*

Base-Emitter

Saturation Voltage

V

BE(on)

-0.85 -1 V IC=-1A, V

CE

=-2V*

Static Forward Current

Transfer Ratio

h

FE

70

80

40

200

130

80

I

C

=-50mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

ZTX549 100 160 300 I

C

=-500mA, V

CE

=-2V*

ZTX549A 150 200 500 I

C

=-500mA, V

CE

=-2V*

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

ZTX549

ZTX549A

3-191

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

T

100 MHz I

C

=-100mA, V

CE

=-5V

f=100MHz

Output Capacitance C

obo

25 pF V

CB

=-10V, f=1MHz

Switching Times t

on

300 ns I

C

=-500mA, V

CC

=-10V

I

B1

=I

B2

=-50mA

t

off

50 ns

C

B

E

E-Line

TO92 Compatible

ZTX549

ZTX549A

3-192

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1  MARCH 94

FEATURES

* 30 Volt V

CEO

* 1 Amp continuous current

*P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-35 V

Collector-Emitter Voltage V

CEO

-30 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-2 A

Continuous Collector Current I

C

-1 A

Power Dissipation: at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-35 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-30 V I

C

=-10mA

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-5 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-0.1

-10

µA

V

CB

=-30V

V

CB

=-30V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

-0.1

µA

V

EB

=-4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-0.25

-0.50

-0.75

V

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

ZTX549A -0.30 V I

C

=-100mA, I

B

=-1mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.9 -1.25 V I

C

=-1A, I

B

=-100mA*

Base-Emitter

Saturation Voltage

V

BE(on)

-0.85 -1 V IC=-1A, V

CE

=-2V*

Static Forward Current

Transfer Ratio

h

FE

70

80

40

200

130

80

I

C

=-50mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

ZTX549 100 160 300 I

C

=-500mA, V

CE

=-2V*

ZTX549A 150 200 500 I

C

=-500mA, V

CE

=-2V*

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

ZTX549

ZTX549A

3-191

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

T

100 MHz I

C

=-100mA, V

CE

=-5V

f=100MHz

Output Capacitance C

obo

25 pF V

CB

=-10V, f=1MHz

Switching Times t

on

300 ns I

C

=-500mA, V

CC

=-10V

I

B1

=I

B2

=-50mA

t

off

50 ns

C

B

E

E-Line

TO92 Compatible

ZTX549

ZTX549A

3-192

D.C.

1s

100ms

10ms

1.0ms

0.3ms

0.1ms

0.1 1

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

IC - Collector Current (Amps)

V

CE

(sa

t

)

- (V

olts)

Switching Speeds

IC - Collector Current (Amps)

Switching

t

i

m

e

IC - Collector Current (Amps) IC - Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

IC - Collector Current (Amps)

V

BE(on)

v I

C

h

FE

-

Gain

V

BE

(sa

t

)

- (V

olts)

V

BE

-

(V

olts)

I

C

-

C

o

l

le

c

to

r

C

u

r

e

nt

(

Amps

)

I

B1

=I

B2

=I

C

/10

VCE - Collector Voltage (Volts)

Safe Operating Area

0.1 100110

0.01

0.1

1

10

Single Pulse Test at T

amb

=25°C

0.7

0.8

0.9

1.0

0.01

0.001

0.01

10

0.1 1

40

80

120

160

200

0.01

10

0.1 1

I

C

/I

B

=100

0.001

0.01

0.1 1

I

C

/I

B

=10

0.01

0.1

10

1

I

C

/I

B

=100

0.6

V

CE

=2V

I

C

/I

B

=10

I

C

/I

B

=10

0.6

0.8

1.0

1.2

1.4

0.2

0.4

0.6

0.8

0

100

80

60

40

0

20

160

140

120

td,tr,tf

(ns)

180

1000

800

600

400

0

200

1600

1400

1200

ts

(ns)

1800

tr

ts

tf

td

10

ZTX549

ZTX549A

3-193

ZTX549STZ

ZTX549STZ

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