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BYW80FP-200

P1-P3P4-P6P7-P7
1/7
BYW80F/FP-200
®
January 2002 - Ed: 3G
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
TO-220AC
BYW80-200
■
Suited for SMPS
■
Very low forward losses
■
Negligible switching losses
■ High surge current capability
■ Insulated packages:
ISOWATT220AC / TO-220FPAC:
Insulation voltage = 2000 V DC
Capacitance = 12 pF
FEATURES
Single chip rectifier suited for Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in TO-220AC, ISOWATT220AC and
TO-220FPAC this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
ISOWATT220AC
BYW80F-200
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
I
F(RMS)
RMS forward current
20 A
I
F(AV)
Average forward current
δ = 0.5
TO-220AC Tc=120°C
10 A
ISOWATT220AC
TO-220FPAC
Tc=95°C
10
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
100 A
Tstg
Storage and junction temperature range
- 65 to + 150 °C
Tj
Maximum operating temperature range
+ 150 °C
ABSOLUTE MAXIMUM RATINGS
K
A
K
A
K
A
TO-220FPAC
BYW80FP-200
I
F(AV)
20 A
V
RRM
200 V
Tj (max) 150°C
V
F
(max) 0.85 V
trr (max) 35 ns
MAIN PRODUCTS CHARACTERISTICS
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BYW80F/FP-200
2/7
Symbol Test Conditions Min. Typ. Max. Unit
I
R
*
T
j
= 25°C V
R
=V
RRM
10 µA
T
j
= 100°C
1mA
V
F**
T
j
= 125°C I
F
=7A
0.85 V
T
j
= 125°C I
F
=15A
1.05
T
j
= 25°C I
F
=15A
1.15
Pulse test:*tp=5ms,duty cycle<2%
** tp = 380 µs, duty cycle<2%
To evaluate the conduction losses use the following equation :
P=0.65xI
F(AV)
+ 0.027 x I
F
2
(RMS)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
= 25°C I
F
= 0.5A
I
R
=1A
Irr = 0.25A 25 ns
I
F
=1A
V
R
= 30V
dI
F
/dt = -50A/µs35
tfr T
j
=25°CI
F
=1A
V
FR
=1.1xV
F
tr=10ns 15 ns
V
FP
T
j
= 25°C I
F
=1A tr=10ns 2 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c)
Junction to case
TO-220AC
2.5 °C/W
ISOWATT220AC / TO-220FPAC
4.7
THERMAL RESISTANCE
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BYW80F/FP-200
3/7
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0
25
50
75
100
125
150
175
200
P=5W
T
I
M
=tp/T
tp
I
M(A)
P=10W
P=15W
Fig. 2: Peak current versus form factor
0.1 1 10 100
Tj=125 C
o
IFM(A)
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig. 3: Forward voltage drop versus forward cur-
rent (maximum values)
0.1
1.0
0.2
0.5
Zth(j-c) (tp. )
K=
Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T
tp
1.0E-03 1.0E-02 1.0E-01
1.0E+00
K
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC)
01234567891011121314
0
2
4
6
8
10
12
14
=0.05
=0.1
=0.2
=0.5
=1
T
=tp/T
tp
I
F(av)(A)
P
F(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current
0.2
0.4
0.6
0.8
1
=0.5
=0.2
=0.1
Single pulse
tp(s)
Zth(j-c) (tp. )
K=
Rth(j-c)
0
1.0E-03 1.0E-02 1.0E-01
1.0E+00 1.0E+01
K
T
=tp/T
tp
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AC / TO-220FPAC)
0.001 0.01 0.1 1
0
10
20
30
40
50
60
70
80
90
100
I
M(A)
Tc=25 C
o
Tc=75 C
o
Tc=120 C
o
IM
t
=0.5
t(s)
Fig. 6: Non repetitive surge peak forward current
versus overload duration (TO-220AC)
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P1-P3P4-P6P7-P7

BYW80FP-200

Mfr. #:
Buy BYW80FP-200
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 200V 10A TO220FP
Lifecycle:
New from this manufacturer.
Delivery:
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