IRFS540A Datasheet IRFS540A | P1-P3

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

175 Operating Temperature

Lower Leakage Current : 10 A (Max.) @ V

DS

= 100V

Lower R

DS(ON)

: 0.041 (Typ.)

Advanced Power MOSFET

Thermal Resistance

Junction-to-Case

Junction-to-Ambient

R

JC

R

JA

/W

Characteristic Max.

Units

Symbol Typ.

FEATURES

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T

C

=25 )

Continuous Drain Current (T

C

=100 )

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

C

=25 )

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

I

D

P

D

T

J

, T

STG

T

L

A

V

mJ

A

mJ

V/ns

W

W/

A

V

DSS

V

TO-220F

1.Gate 2. Drain 3. Source

3

2

1

µ

Ω

O

1

O

2

O

3

Ο

C

Ο

C

O

1

O

1

Ο

C

Ο

C

Ο

C

Ο

C

Ο

C

θ

IRFS540A

BV

DSS

= 100 V

R

DS(on)

= 0.052

I

D

= 17 A

100

17

12

110

385

17

3.9

6.5

39

0.26

- 55 to +175

300

3.8

62.5

--

Ω

20

+

_

Rev. B

N-CHANNEL

POWER MOSFET

Electrical Characteristics (T

C

=25 unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain(“Miller”) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

BV/ T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/

V

nA

A

pF

ns

nC

--

V

GS

=0V,I

D

=250 A

I

D

=250 A See Fig 7

V

DS

=5V,I

D

=250 A

V

GS

=20V

V

GS

=-20V

V

DS

=100V

V

DS

=80V,T

C

=150

V

GS

=10V,I

D

=8.5A

V

DS

=40V,I

D

=8.5A

V

DD

=50V,I

D

=28A,

R

G

=9.1

See Fig 13

V

DS

=80V,V

GS

=10V,

I

D

=28A

See Fig 6 & Fig 12

Drain-to-Source Leakage Current

V

GS

=0V,V

DS

=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V

ns

C

Integral reverse pn-diode

in the MOSFET

T

J

=25 ,I

S

=17A,V

GS

=0V

T

J

=25 ,I

F

=28A

di

F

/dt=100A/ s

∆ ∆

Ο

C

Ω

µ

O

4

O

5

Ο

C

µ

Ο

C

O

4

O

4

O

4

O

4

O

1

Ω

Ο

C

µ

Ο

C

O

5

O

4

µ

IRFS540A

100

--

2.0

--

0.11

--

325

148

18

90

56

60

10.8

27.9

--

4.0

100

-100

10

100

0.052

--

1710

380

170

50

180

120

78

--

18.84

1320

--

132

0.63

17

110

1.5

--

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=2mH, I

AS

=17A, V

DD

=25V, R

G

=27 , Starting T

J

=25

I

SD

28A, di/dt 400A/ s, V

DD

BV

DSS

, Starting T

J

=25

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

Essentially Independent of Operating Temperature

<

_

<

_

<

_

<

_

O

1

O

2

O

3

O

4

O

5

Ω

o

C

o

C

µ

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

IRFS540A

10

-1

10

0

10

1

10

0

10

1

10

2

@ Notes :

1. 250

µ

s Pulse Test

2. T

C

= 25

o

C

V

GS

Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

2 4 6 8 10

10

0

10

1

10

2

25

o

C

175

o

C

- 55

o

C

@ Notes :

1. V

GS

= 0 V

2. V

DS

= 40 V

3. 250

µ

s Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

0 30 60 90 120

0.00

0.02

0.04

0.06

0.08

@ Note : T

J

= 25

o

C

V

GS

= 20 V

V

GS

= 10 V

R

DS(on)

, [

Ω

]

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

10

0

10

1

10

2

175

o

C

25

o

C

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain Voltage [V]

10

0

10

1

0

500

1000

1500

2000

2500

C

iss

= C

gs

+ C

gd

( C

ds

= shorted )

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

V

DS

, Drain-Source Voltage [V]

0 10 20 30 40 50 60 70

0

5

10

V

DS

= 80 V

V

DS

= 50 V

V

DS

= 20 V

@ Notes : I

D

=28.0 A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

IRFS540A

IRFS540A

Products related to this Datasheet