© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 14
1 Publication Order Number:
MC34262/D
MC34262, MC33262
Power Factor Controllers
The MC34262/MC33262 are active power factor controllers
specifically designed for use as a preconverter in electronic ballast
and in offline power converter applications. These integrated
circuits feature an internal startup timer for standalone applications,
a one quadrant multiplier for near unity power factor, zero current
detector to ensure critical conduction operation, transconductance
error amplifier, quickstart circuit for enhanced startup, trimmed
internal bandgap reference, current sensing comparator, and a totem
pole output ideally suited for driving a power MOSFET.
Also included are protective features consisting of an overvoltage
comparator to eliminate runaway output voltage due to load removal,
input undervoltage lockout with hysteresis, cyclebycycle current
limiting, multiplier output clamp that limits maximum peak switch
current, an RS latch for single pulse metering, and a drive output high
state clamp for MOSFET gate protection. These devices are
available in dualinline and surface mount plastic packages.
Features
Overvoltage Comparator Eliminates Runaway Output Voltage
Internal Startup Timer
One Quadrant Multiplier
Zero Current Detector
Trimmed 2% Internal Bandgap Reference
Totem Pole Output with High State Clamp
Undervoltage Lockout with 6.0 V of Hysteresis
Low Startup and Operating Current
Supersedes Functionality of SG3561 and TDA4817
These are PbFree and HalideFree Devices
Figure 1. Simplified Block Diagram
Voltage
Feedback
Input
Multiplier,
Latch,
PWM,
Timer,
&
Logic
Error Amp
Multiplier
Undervoltage
Lockout
2.5V
Reference
Zero Current Detector
5
8
6
7
4
3
2
1
Drive Output
GND
Zero Current
Detect Input
Multiplier
Input
Compensation
V
CC
Current Sense
Input
Overvoltage
Comparator
+
1.08 V
ref
+
V
ref
Quickstart
POWER FACTOR
CONTROLLERS
PIN CONNECTIONS
SOIC8
D SUFFIX
CASE 751
8
1
8
1
PDIP8
P SUFFIX
CASE 626
Voltage Feedback
Input
1
2
3
4
8
7
6
5
(Top View)
Compensation
Multiplier Input
Current Sense
Input
V
CC
Drive Output
GND
Zero Current
Detect Input
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See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
ORDERING INFORMATION
x = 3 or 4
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = PbFree Package
G = PbFree Package
MARKING
DIAGRAMS
MC3x262P
AWL
YYWWG
1
8
3x262
ALYW
G
1
8
MC34262, MC33262
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Total Power Supply and Zener Current (I
CC
+ I
Z
) 30 mA
Output Current, Source or Sink (Note 1) I
O
500 mA
Current Sense, Multiplier, and Voltage Feedback Inputs V
in
1.0 to +10 V
Zero Current Detect Input
High State Forward Current
Low State Reverse Current
I
in
50
10
mA
Power Dissipation and Thermal Characteristics
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T
A
= 70°C
Thermal Resistance, JunctiontoAir
D Suffix, Plastic Package, Case 751
Maximum Power Dissipation @ T
A
= 70°C
Thermal Resistance, JunctiontoAir
P
D
R
q
JA
P
D
R
q
JA
800
100
450
178
mW
°C/W
mW
°C/W
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature (Note 4)
MC34262
MC33262
T
A
0 to + 85
40 to +105
°C
Storage Temperature T
stg
65 to +150 °C
ESD Protection (Note 2)
Human Body Model ESD
Machine Model ESD
Charged Device Model ESD
HBM
MM
CDM
2000
200
2000
V
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Maximum package power dissipation limits must be observed.
2. ESD protection per JEDEC JESD22A114F for HBM, per JEDEC JESD22A115A for MM, and per JEDEC JESD22C101D for CDM.
This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V (Note 3), for typical values T
A
= 25°C, for min/max values T
A
is the operating
ambient temperature range that applies (Note 4), unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ERROR AMPLIFIER
Voltage Feedback Input Threshold
T
A
= 25°C
T
A
= T
low
to T
high
(V
CC
= 12 V to 28 V)
V
FB
2.465
2.44
2.5
2.535
2.54
V
Line Regulation (V
CC
= 12 V to 28 V, T
A
= 25°C) Reg
line
1.0 10 mV
Input Bias Current (V
FB
= 0 V) I
IB
0.1 0.5 mA
Transconductance (T
A
= 25°C) g
m
80 100 130 mmho
Output Current
Source (V
FB
= 2.3 V)
Sink (V
FB
= 2.7 V)
I
O
10
10
mA
Output Voltage Swing
High State (V
FB
= 2.3 V)
Low State (V
FB
= 2.7 V)
V
OH(ea)
V
OL(ea)
5.8
6.4
1.7
2.4
V
OVERVOLTAGE COMPARATOR
Voltage Feedback Input Threshold V
FB(OV)
1.065 V
FB
1.08 V
FB
1.095 V
FB
V
MULTIPLIER
Input Bias Current, Pin 3 (V
FB
= 0 V) I
IB
0.1 0.5 mA
Input Threshold, Pin 2 V
th(M)
1.05 V
OL(EA)
1.2 V
OL(EA)
V
3. Adjust V
CC
above the startup threshold before setting to 12 V.
4. T
low
=0°C for MC34262 T
high
= +85°C for MC34262
= 40°C for MC33262 = +105°C for MC33262.
MC34262, MC33262
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3
ELECTRICAL CHARACTERISTICS (continued) (V
CC
= 12 V (Note 6), for typical values T
A
= 25°C, for min/max values T
A
is the
operating ambient temperature range that applies (Note 7), unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
MULTIPLIER
Dynamic Input Voltage Range
Multiplier Input (Pin 3)
Compensation (Pin 2)
V
Pin
3
V
Pin
2
0 to 2.5
V
th(M)
to
(V
th(M)
+ 1.0)
0 to 3.5
V
th(M)
to
(V
th(M)
+ 1.5)
V
Multiplier Gain (V
Pin
3
= 0.5 V, V
Pin
2
= V
th(M)
+ 1.0 V) (Note 8) K 0.43 0.65 0.87 1/V
ZERO CURRENT DETECTOR
Input Threshold Voltage (V
in
Increasing) V
th
1.33 1.6 1.87 V
Hysteresis (V
in
Decreasing) V
H
100 200 300 mV
Input Clamp Voltage
High State (I
DET
= + 3.0 mA)
Low State (I
DET
= 3.0 mA)
V
IH
V
IL
6.1
0.3
6.7
0.7
1.0
V
CURRENT SENSE COMPARATOR
Input Bias Current (V
Pin
4
= 0 V) I
IB
0.15 1.0 mA
Input Offset Voltage (V
Pin
2
= 1.1 V, V
Pin
3
= 0 V) V
IO
9.0 25 mV
Maximum Current Sense Input Threshold (Note 9) V
th(max)
1.3 1.5 1.8 V
Delay to Output t
PHL(in/out)
200 400 ns
DRIVE OUTPUT
Output Voltage (V
CC
= 12 V)
Low State (I
Sink
= 20 mA)
Low State (I
Sink
= 200 mA)
High State (I
Source
= 20 mA)
High State (I
Source
= 200 mA)
V
OL
V
OH
9.8
7.8
0.3
2.4
10.3
8.4
0.8
3.3
V
Output Voltage (V
CC
= 30 V)
High State (I
Source
= 20 mA, C
L
= 15 pF)
V
O(max)
14 16 18
V
Output Voltage Rise Time (C
L
= 1.0 nF) t
r
50 120 ns
Output Voltage Fall Time (C
L
= 1.0 nF) t
f
50 120 ns
Output Voltage with UVLO Activated
(V
CC
= 7.0 V, I
Sink
= 1.0 mA)
V
O(UVLO)
0.1 0.5 V
RESTART TIMER
Restart Time Delay t
DLY
200 620 ms
UNDERVOLTAGE LOCKOUT
Startup Threshold (V
CC
Increasing) V
th(on)
11.5 13 14.5 V
Minimum Operating Voltage After TurnOn (V
CC
Decreasing) V
Shutdown
7.0 8.0 9.0 V
Hysteresis V
H
3.8 5.0 6.2 V
TOTAL DEVICE
Power Supply Current
Startup (V
CC
= 7.0 V)
Operating
Dynamic Operating (50 kHz, C
L
= 1.0 nF)
I
CC
0.25
6.5
9.0
0.4
12
20
mA
Power Supply Zener Voltage (I
CC
= 25 mA) V
Z
30 36 V
5. Maximum package power dissipation limits must be observed.
6. Adjust V
CC
above the startup threshold before setting to 12 V.
7. T
low
=0°C for MC34262 T
high
= +85°C for MC34262
= 40°C for MC33262 = +105°C for MC33262.
8. K +
Pin 4 Threshold
V
Pin 3
(V
Pin2
* V
th(M)
)
9. This parameter is measured with V
FB
= 0 V, and V
Pin
3
= 3.0 V.

MC34262D

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Power Factor Correction - PFC Critical Mode PFC
Lifecycle:
New from this manufacturer.
Delivery:
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