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NTMFS4122NT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 5
1 Publication Order Number:
NTMFS4122N/D
NTMFS4122N
Power MOSFET
30 V, 23 A, Single N−Channel,
SO−8 Flat Lead
Features
• Low R
DS(on)
• Low Inductance SO−8 Package
• These are Pb−Free Devices
Applications
• Notebooks, Graphics Cards
• DC−DC Converters
• Synchronous Rectification
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
$20 V
Continuous Drain Current
(Note 1 )
Steady
State
T
A
= 25°C
I
D
14
A
T
A
= 85°C 10
t v10 s T
A
= 25°C 23
Power Dissipation (Note 1) Steady
State
T
A
= 25°C
P
D
2.2 W
t v10 s 5.8
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25°C
I
D
9.1
A
T
A
= 85°C 6.5
Power Dissipation (Note 2)
T
A
= 25°C
P
D
0.9 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
68 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
7.0 A
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 30 V, V
GS
= 10 V, I
PK
= 21 A, L = 1 mH,
R
G
= 25 W)
E
AS
220 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
56.3
°C/W
Junction−to−Ambient − t v10 s (Note 1)
R
q
JA
21.5
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
141.6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0264 in sq).
G
D
S
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4122N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1
MARKING
DIAGRAM
4122N
AYWZZ
S
S
S
G
D
D
D
D
http://onsemi.com
30 V
6.3 mW @ 4.5 V
4.6 mW @ 10 V
R
DS(on)
TYP
23 A
I
D
MAX
(Note 1)
V
(BR)DSS
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4122NT1G SO−8 FL
(Pb−Free)
1500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTMFS4122NT3G SO−8 FL
(Pb−Free)
5000 Tape & Reel
NTMFS4122N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
23 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25°C
1.0 mA
T
J
= 125°C
10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
6.6 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 14 A
4.6 6.0 mW
V
GS
= 4.5 V, I
D
= 12 A
6.3 8.5
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 10 A 13.2 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 24 V
2310
pF
Output Capacitance C
OSS
460
Reverse Transfer Capacitance C
RSS
263
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 12 A
20 30
nC
Threshold Gate Charge Q
G(TH)
3.0
Gate−to−Source Charge Q
GS
6.7
Gate−to−Drain Charge Q
GD
8.1
Gate Resistance R
G
0.7
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 1.0 A, R
L
= 15 W, R
G
= 3.0 W
20
ns
Rise Time t
r
20
Turn−Off Delay Time t
d(OFF)
30
Fall Time t
f
31
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 7.0 A
T
J
= 25°C
0.75 1.0
V
T
J
= 125°C
0.6
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 7.0 A
28
ns
Charge Time t
a
14
Discharge Time t
b
14
Reverse Recovery Charge Q
RR
23 nC
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4122N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
0
14
0.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
12
0
Figure 1. On−Region Characteristics
3
16
14
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Drain Current
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.8
1
0.8
0.6
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= −55°C
75
T
J
= 25°C
I
D
= 14 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 10 V
10
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
24
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
3.1 V
2.8 V
V
GS
= 4.5 V
V
DS
= 30 V
12 27
2.6 V
12
4
30
16
V
GS
= 3.4 V to 10 V
18
125100
5
4
0.006
I
D,
DRAIN CURRENT (AMPS)
0.001
T
J
= 25°C
V
GS
= 10 V
0.003
0.004
0.007
2810
0
T
J
= 125°C
T
J
= −55°C
6
0.006
0.003
0.007
0.002
0.004
0.005
100
3
20
23
20
2
10 305202515
1.2
18
18
1 2.5
10000
3.0 V
3.3 V
0.005
22
24 24
22
1
0.008
0.002
0.008
1000
1.6
1.3
1.7
0.9
0.7
1.1
1.5
211569
1.5
10
8
6
4
2
3.2 V
10
8
6
4
2
P1-P3P4-P5

NTMFS4122NT3G

Mfr. #:
Buy NTMFS4122NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 9.1A SO8FL
Lifecycle:
New from this manufacturer.
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