BUL310

BUL310

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

NPN TRANSISTOR

■

HIGH VOLTAGE CAPABILITY

■

LOW SPREAD OF DYNAMIC PARAMETERS

■

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

■

FULLY CHARACTERISED AT 125

o

C

■

LARGE RBSOA

APPLICATIONS

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and high voltage capability. It

uses a Cellular Emitter structure with planar edge

termination to enhance switching speeds while

maintaining a wide RBSOA.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

February 2002

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

Collector-Emitter Voltage (V

BE

= 0) 1000 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 500 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 9 V

I

C

Collector Current 5 V

I

CM

Collector Peak Current (t

p

<5 ms) 10 A

I

B

Base Current 3 A

I

BM

Base Peak Current (t

p

<5 ms) 4 A

P

tot

Total Dissipation at Tc = 25

o

C75W

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

TO-220

®

1/6

Obsolete Product(s) - Obsolete Product(s)

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-Case Max

Thermal Resistance Junction-Ambient Max

1.65

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

(T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

Collector Cut-off

Current (V

BE

= 0)

V

CE

= 1000 V

V

CE

= 1000 V T

j

= 125

o

C

100

500

µA

µA

I

CEO

Collector Cut-off

Current (I

B

= 0)

V

CE

= 500 V 250 µA

V

CEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 100 mA L= 25 mH 500 V

V

EBO

Emitter-Base Voltage

(I

C

= 0)

I

E

= 10 mA 9 V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 1 A I

B

= 0.2 A

I

C

= 2 A I

B

= 0.4 A

I

C

= 3 A I

B

= 0.6 A

0.5

0.7

1.1

V

V

V

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 1 A I

B

= 0.2 A

I

C

= 2 A I

B

= 0.4 A

I

C

= 3 A I

B

= 0.6 A

1

1.1

1.2

V

V

V

h

FE

∗ DC Current Gain I

C

= 10 mA V

CE

= 5 V

I

C

= 3 A V

CE

= 2.5 V

10

61014

t

s

t

f

INDUCTIVE LOAD

Storage Time

Fall Time

I

C

= 2 A I

B1

= 0.4 A

V

BE(off)

= -5 V R

BB

= 0 Ω

V

CL

= 250 V L = 200 µH

(see figure 1)

1.2

80

1.9

160

µs

ns

t

s

t

f

INDUCTIVE LOAD

Storage Time

Fall Time

I

C

= 2 A I

B1

= 0.4 A

V

BE(off)

= -5V R

BB

= 0 Ω

V

CL

= 250 V L = 200 µH

T

j

= 125

o

C (see figure 1)

1.8

150

µs

ns

∗

Pulsed: Pulse duration = 300

µ

s, duty cycle 1.5 %

Safe Operating Areas Derating Curve

BUL310

2/6

Obsolete Product(s) - Obsolete Product(s)

DC Current Gain

Collector Emitter Saturation Voltage

Inductive Load Fall Time

DC Current Gain

Base Emitter Saturation Voltage

Inductive Load Storage Time

BUL310

3/6

Obsolete Product(s) - Obsolete Product(s)

BUL310

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT NPN Hi-Volt Fast Sw

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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BUL310