P300A, P300B, P300D, P300G, P300J, P300K, P300K
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Vishay General Semiconductor
Revision: 13-Aug-13
1
Document Number: 88691
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
General Purpose Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current, I
R
less than 0.1 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
FSM
200 A
I
R
5.0 μA
V
F
at I
F
= 3.0 A 1.2 V
T
J
max. 150 °C
Package DO-201AD
Diode variations Single die
DO-201AD
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL P300A P300B P300D P300G P300J P300K P300M UNIT
Max. repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Max. RMS voltage V
RMS
35 70 140 280 420 560 700 V
Max. DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Max. average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
200 A
Operating junction and storage temperature range T
J
, T
STG
- 50 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL P300A P300B P300D P300G P300J P300K P300M UNIT
Max. instantaneous
forward voltage
3.0 A V
F
1.2 V
Max. DC reverse current
at rated DC blocking
voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 100 °C 25
Typical reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
2.0 μs
Typical junction
capacitance
4.0 V, 1 MHz C
J
30 pF