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SI1488DH-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Vishay Siliconix
Si1488DH
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
0.1
0.01
1
10
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.
8
1.0
- 50 - 25 0 25 50 75 100 125 150
)V(
V
)ht(SG
T
J
- Temperature (°C)
I
D
= 250 µA
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
0.00
0.03
0.06
0.09
0.12
012345
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
R
)no(SD
( ecnatsiseR-nO - Ω )
I
D
= 4.6 A
0
20
30
5
15
r (W)ewoP
Time (s)
25
1 600 100 0.001
0.1
10 0.01
10
Safe Operating Area, Junction-to-Ambient
0.001
100
1
0.1 1 100
0.01
10
)
A
(tn
e
r
r
uCniarD-
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
T
A
= 25 °C
Single Pulse
BVDSS Limited
Limited by R
DS(on)
*
100 ms
DC
1 s
10 s
10 ms
1 ms
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
www.vishay.com
5
Vishay Siliconix
Si1488DH
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0 25 50 75 100 125 150
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Package Limited
Power Derating
0.0
0.7
1.4
2.1
2.8
3.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
)W( noitapissiD rewoP
www.vishay.com
6
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Vishay Siliconix
Si1488DH
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73788
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
110 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 ° C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T
e
v
i
t c
e
f
f
E
d e
z i
l a m r o N
e c n a d e
p
m I
l a m
r
e
h
T
P1-P3P4-P6P7-P7

SI1488DH-T1-E3

Mfr. #:
Buy SI1488DH-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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