PMPB11EN,115 Datasheet PMPB11EN,115 | P7-P9

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 30 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C 1 1.5 2 V

V

DS

= 30 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µAI

DSS

drain leakage current

V

DS

= 30 V; V

GS

= 0 V; T

j

= 150 °C - - 20 µA

V

GS

= 20 V; V

DS

= 0 V; T

j

= 25 °C - - 100 nAI

GSS

gate leakage current

V

GS

= -20 V; V

DS

= 0 V; T

j

= 25 °C - - 100 nA

V

GS

= 10 V; I

D

= 9 A; T

j

= 25 °C - 12 14.5 mΩ

V

GS

= 10 V; I

D

= 9 A; T

j

= 150 °C - 18 20.5 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 4.5 V; I

D

= 3.7 A; T

j

= 25 °C - 14 16.5 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 9 A; T

j

= 25 °C - 20 - S

R

G

gate resistance f = 1 MHz - 1.6 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 13.7 20.6 nC

Q

GS

gate-source charge - 1.73 - nC

Q

GD

gate-drain charge

V

DS

= 15 V; I

D

= 6 A; V

GS

= 10 V;

T

j

= 25 °C

- 1.71 - nC

C

iss

input capacitance - 840 - pF

C

oss

output capacitance - 155 - pF

C

rss

reverse transfer

capacitance

V

DS

= 15 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 65 - pF

t

d(on)

turn-on delay time - 9 - ns

t

r

rise time - 10 - ns

t

d(off)

turn-off delay time - 17 - ns

t

f

fall time

V

DS

= 15 V; I

D

= 5 A; V

GS

= 4.5 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 9 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 2.2 A; V

GS

= 0 V; T

j

= 25 °C - 0.8 1.2 V

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 7 / 15

V

DS

(V)

0 431 2

017aaa554

10

15

5

20

25

I

D

(A)

0

V

GS

= 5 V

3 V

2.7 V

2.5 V

2.3 V

2.1 V

2.9 V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa555

10

-4

10

-5

10

-3

I

D

(A)

10

-6

V

GS

(V)

0.0 2.52.01.0 1.50.5

min typ max

T

j

= 25 °C; V

DS

= 5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

I

D

(A)

0 252010 155

017aaa556

20

30

10

40

50

R

DSon

(mΩ)

0

V

GS

= 2.75 V

2.5 V

3.0 V

3.25 V

3.5 V

4.0 V

5.0 V

4.5 V

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 862 4

017aaa557

20

30

10

40

50

R

DSon

(mΩ)

0

T

j

= 25 °C

T

j

= 150 °C

I

D

= 8 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 8 / 15

017aaa558

V

GS

(V)

0 321

10

15

5

20

25

I

D

(A)

0

T

j

= 25 °CT

j

= 150 °C

V

DS

> I

D

× R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

017aaa559

1.0

1.4

1.8

a

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

017aaa560

1.0

1.5

0.5

2.0

2.5

V

GS(th)

(V)

0.0

min

typ

max

I

D

= 0.25 mA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

V

DS

(V)

10

-1

10

2

101

017aaa561

10

3

10

2

10

4

C

(pF)

10

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMPB11EN,115

PMPB11EN,115

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