PAM8403
Document number: DSxxxxx Rev. 1 - 4
4 of 11
www.diodes.com
November 2012
© Diodes Incorporated
PAM8403
Product Line o
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, V
DD
= 5V, Gain = 24dB, R
L
= 8Ω, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
V
DD
Supply Voltage 2.5 5.5 V
P
O
Output Power
THD+N = 10%, f = 1KHz, R
L
= 4Ω
V
DD
= 5.0V
3.2
W
V
DD
= 3.6V
1.6
V
DD
= 3.2V
1.3
THD+N = 1%, f = 1KHz, R
L
= 4Ω
V
DD
= 5.0V
2.5
W
V
DD
= 3.6V
1.3
V
DD
= 3.2V
0.85
THD+N = 10%, f = 1KHz, R
L
= 8Ω
V
DD
= 5.0V
1.8
W
V
DD
= 3.6V
0.9
V
DD
= 3.2V
0.6
THD+N = 1%, f = 1KHz, R
L
= 8Ω
V
DD
= 5.0V
1.4
W
V
DD
= 3.6V
0.72
V
DD
= 3.2V
0.45
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 5.0V, P
O
= 1W, R
L
= 8Ω
f = 1kHz
0.15
%
V
DD
= 3.6V, P
O
= 0.1W, R
L
= 8Ω
0.11
V
DD
= 5.0V, P
O
= 0.5W, R
L
= 4Ω
f = 1kHz
0.15
%
V
DD
= 3.6V, P
O
= 0.2W, R
L
= 4Ω
0.11
G
V
Closed Loop Gain
V
DD
= 3V to 5V
24 dB
PSRR Power Supply Ripple Rejection
V
DD
= 5.0V, Inputs AC-Grounded
with C
IN
= 0.47µF
f = 100Hz -59
dB
f = 1kHz -58
C
S
Crosstalk
V
DD
= 5.0V, P
O
= 0.5W, R
L
= 8Ω,
G
V
= 20db
f = 1kHz -95 dB
SNR Signal-to-Noise Ratio
V
DD
= 5.0V, V
ORMS
= 1V, G
V
= 20db
f = 1kHz 80 dB
V
N
Output Noise
V
DD
= 5.0V, Inputs AC-Grounded
with C
IN
= 0.47µF
No A-Weighting 100
µV
A-Weighting 150
Dyn Dynamic Range
V
DD
= 5.0V, THD = 1%
f = 1kHz 90 dB
η Efficiency
R
L
= 8Ω, THD = 10%
f = 1kHz
87
%
R
L
= 4Ω, THD = 10%
83
I
Q
Quiescent Current
V
DD
= 5.0V
No Load
16
mA
V
DD
= 3.6V
10
V
DD
= 3.0V
8
I
MUTE
Muting Current
V
DD
= 5.0V V
MUTE
= 0.3V
3.5 mA
I
SD
Shutdown Current
V
DD
= 2.5V to 5.5V V
SD
= 0.3V
< 1 µA
R
DS(ON)
Static Drain-to-Source
On-State Resistor
I
DS
= 500mA, V
GS
= 5V
PMOS 180
mΩ
NMOS 140
f
SW
Switching Frequency
V
DD
= 3.0V to 5.0V
260 kHz
V
OS
Output Offset Voltage
V
IN
= 0V, V
DD
= 5.0V
10 mV
V
IH
Enable Input High Voltage
V
DD
= 5.0V
1.5 1.4
V
V
IL
Enable Input Low Voltage
V
DD
= 5.0V
0.7 0.4
V
IH
MUTE Input High Voltage
V
DD
= 5.0V
1.5 1.4
V
V
IL
MUTE Input Low Voltage
V
DD
= 5.0V
0.7 0.4
OTP Over Temperature Protection
No Load, Junction Temperature
V
DD
= 5.0V
140 V
OTH Over Temperature Hysterisis 30 V
