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BC857W,115
P1-P3
P4-P6
P7-P9
P10-P11
2002 Feb 04
6
NXP Semico
nductors
Product dat
a sheet
PNP general purpose transis
tors
BC856W
; BC857W; BC858W
handbook, halfpage
0
400
600
800
1000
h
FE
200
MGT715
−
10
−
2
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
(1)
(2)
(3)
Fig.6
DC current gain as a fu
nction of collector
current; ty
pical values.
BC857BW;
V
CE
=
−
5 V.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
0
−
1200
−
1000
−
800
−
600
−
400
−
200
MGT716
−
10
−
2
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
Fig.7
Base-emitter voltage
as a function of
collector current;
typical
values.
BC857BW;
V
CE
=
−
5 V.
(1)
T
amb
=
−
55
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
= 150
°
C.
handbook, halfpage
−
10
4
−
10
3
−
10
2
−
10
MGT717
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
Fig.8
Collector-emitter saturation voltage as
a
function of collector current; typic
al values.
BC857BW;
I
C
/I
B
= 20.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
MGT718
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
0
−
1200
−
1000
−
800
−
600
−
400
−
200
V
BEsat
(mV)
(1)
(2)
(3)
Fig.9
Base-emitter saturation v
oltage as a
function of collector current; typic
al values.
BC857BW;
I
C
/I
B
= 20.
(1)
T
amb
=
−
55
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
= 150
°
C.
2002 Feb 04
7
NXP Semico
nductors
Product dat
a sheet
PNP general purpose transis
tors
BC856W
; BC857W; BC858W
handbook, halfpage
0
400
600
800
1000
h
FE
200
MGT719
−
10
−
2
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
(1)
(2)
(3)
Fig.10
DC curre
nt gain as a function of c
ollector
current; ty
pical values.
BC857CW;
V
CE
=
−
5 V.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
0
−
1200
−
1000
−
800
−
600
−
400
−
200
MGT720
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
Fig.11
Base-emitter v
oltage as a function of
collector current;
typical
values.
BC857CW;
V
CE
=
−
5 V.
(1)
T
amb
=
−
55
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
= 150
°
C.
handbook, halfpage
−
10
4
−
10
3
−
10
2
−
10
MGT721
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
Fig.12
Collector-
emitter saturation voltage as a
function of collector current; typic
al values.
BC857CW;
I
C
/I
B
= 20.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
MGT722
−
10
−
1
−
1
−
10
−
10
2
−
10
3
I
C
(mA)
0
−
1200
−
1000
−
800
−
600
−
400
−
200
V
BEsat
(mV)
(1)
(2)
(3)
Fig.13
Base-emitter satur
ation voltage as a
function of collector current; typic
al values.
BC857CW;
I
C
/I
B
= 20.
(1)
T
amb
=
−
55
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
= 150
°
C.
2002 Feb 04
8
NXP Semico
nductors
Product dat
a sheet
PNP general purpose transis
tors
BC856W
; BC857W; BC858W
PACKAGE OUTLINE
UNIT
A
1
max
b
p
cD
E
e
1
H
E
L
p
Qw
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
b
p
D
e
1
e
A
B
A
1
L
p
Q
detail X
c
H
E
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads
SOT32
3
97-02-28
P1-P3
P4-P6
P7-P9
P10-P11
BC857W,115
Mfr. #:
Buy BC857W,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS GP TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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