OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BC858W,115

P1-P3P4-P6P7-P9P10-P11
2002 Feb 04 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856W − −80 V
BC857W − −50 V
BC858W − −30 V
V
CEO
collector-emitter voltage open base
BC856W − −65 V
BC857W − −45 V
BC858W − −30 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 625 K/W
2002 Feb 04 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − −1 −15 nA
V
CB
= −30 V; I
E
= 0;
T
j
= 150 °C
− − −4 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V
BC856W 125 − 475
BC857W; BC858W 125 − 800
BC856AW; BC857AW 125 − 250
BC856BW; BC857BW 220 − 475
BC857CW 420 − 800
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −75 −300 mV
I
C
= −100 mA; I
B
= −5 mA;
note
1
− −250 −600 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −700 − mV
I
C
= −100 mA; I
B
= −5 mA;
note
1
− −850 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5 V − − −820 mV
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0;
f
= 1 MHz
− − 3 pF
C
e
emitter capacitance V
EB
= −0.5 V; I
C
= I
c
= 0;
f
= 1 MHz
− − 12 pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f
= 100 MHz
100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V;
R
S
= 2 kΩ; f = 1 kHz;
B
= 200 Hz
− − 10 dB
2002 Feb 04 5
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
handbook, halfpage
0
200
300
400
500
h
FE
100
MGT711
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
BC857AW; V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
− 1200
− 1000
− 800
− 600
− 400
− 200
MGT712
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
BC857AW; V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
− 10
4
− 10
3
− 10
2
− 10
MGT713
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857AW; I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MGT714
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
0
− 1200
− 1000
− 800
− 600
− 400
− 200
V
BEsat
(mV)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
BC857AW; I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
P1-P3P4-P6P7-P9P10-P11

BC858W,115

Mfr. #:
Buy BC858W,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS GP TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet