RB751_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 May 2007 3 of 10
NXP Semiconductors
RB751 series
Schottky barrier single diodes
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-40V
V
R
reverse voltage - 40 V
I
F
forward current - 120 mA
I
FSM
non-repetitive peak forward
current
square wave;
t
p
<10ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
RB751CS40
[2]
- 250 mW
RB751S40
[2]
- 280 mW
RB751V40 - 280 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
RB751CS40
[2]
- - 500 K/W
RB751S40
[2]
- - 450 K/W
RB751V40 - - 450 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=1mA
[1]
- - 370 mV
I
R
reverse current V
R
= 30 V - - 0.5 µA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz - 2 - pF
