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D5V0F4U6S-7

P1-P3P4-P4
D5V0F4U6S
Document number: DS35495 Rev. 4 - 2
1 of 4
www.diodes.com
June 2013
© Diodes Incorporated
D5V0F4U6S
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Features
IEC 61000-4-2 (ESD): Air ±15kV, Contact ±8kV
4 Channels of ESD Protection
Low Channel Input Capacitance of 0.5pF Typical
Typically Used at High Speed Ports such as USB 2.0, USB3.0,
IEEE1394, Serial ATA, DVI, HDMI, PCI
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel
D5V0F4U6S-7 Standard TV8 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Device Schematic
TV8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
SOT363
TV8
YM
CH 4
CH 1
CH 3
CH 2
V
DD
GND
12 3
65 4
D5V0F4U6S
Document number: DS35495 Rev. 4 - 2
2 of 4
www.diodes.com
June 2013
© Diodes Incorporated
D5V0F4U6S
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
3.0 A
8/20µs, Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV
Standard IEC 61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage
V
RWM
— — 5.5 V —
Reverse Current (Note 6)
I
R
— — 200 nA
V
R
= 5.5V
Reverse Breakdown Voltage
V
BR
6.0 — — V
I
R
= 1mA
Reverse Clamping Voltage, Positive Transients
(Note 7)
V
CL
— 10 12 V
I
PP
= 1A, t
p
= 8/20μs
Dynamic Resistance
R
DYN
— 1.0 — Ω
I
R
= 1A, t
p
= 8/20μs
Capacitance (Note 8)
C
T
— 0.4 0.65 pF
V
R
= 2.5V, f = 1MHz
— 0.5 — pF
V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
pp
) waveform.
8. Measured from any CH to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
0
125 175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
25
100
50 75
150
25
75
125
200
175
Note 5
0
50
25 50
75 100 125
150
P
EAK
P
U
LSE DE
R
A
T
IN
G
%
O
F
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200
D5V0F4U6S
Document number: DS35495 Rev. 4 - 2
3 of 4
www.diodes.com
June 2013
© Diodes Incorporated
D5V0F4U6S
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0
t, TIME ( s)
Figure 3 Pulse Waveform
20 40
60
100
50
0
Peak Value I
pp
Half Value I /2
pp
8x20 Waveform
as defined by R.E.A.
I , PEAK PULSE CURRENT (%I )
PppP
0.1
1
10
100
1000
300 500 700 900 1100
Figure 4 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.1
1
10
100
0123456
I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
R
Figure 5 Typical Reverse Characteristics
V , REVERSE VOLTAGE (V)
R
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.4
0.45
0.5
0.55
0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Figure 6 Total Capacitance vs. Reverse Voltage
V , REVERSE VOLTAGE (V)
R
C , TOTAL CAPACITANCE (pF)
T
f = 1MHz
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11

0° 8° -
All Dimensions in mm
A
M
J
L
D
B C
H
K
F
Note 8
P1-P3P4-P4

D5V0F4U6S-7

Mfr. #:
Buy D5V0F4U6S-7
Manufacturer:
Diodes Incorporated
Description:
TVS Diodes / ESD Suppressors 4 Channel ESD 0.5pF TVS Array 200mW
Lifecycle:
New from this manufacturer.
Delivery:
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