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NSBC143EPDP6T5G
P1-P3
P4-P6
P7-P9
P10-P10
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
www
.onsemi.com
48
TYPICAL CHARACTERISTICS
−
NPN TRANSIST
OR
MUN5332DW1, NSBC143EPDXV6
Figure 78. V
CE(sat)
, vs. I
C
Figure 79. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
50
40
30
20
10
0
0.01
0.1
1
100
10
1
0.1
0.1
1
10
100
1000
Figure 80. Output Capacitance
Figure 81. Output Current vs. Input V
oltage
V
R
, REVERSE VOL
T
AGE (V)
V
in
, INPUT VOL
T
AGE (V)
50
40
30
20
10
0
0
0.4
0.8
1.6
2.0
2.8
3.2
3.6
5
4
3
2
1
0
0.01
0.1
1
10
100
Figure 82. Input V
oltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
50
40
30
20
10
0
0.1
1
10
100
V
CE(sat)
, COLLECTOR
−
EMITTER VOL
T
AGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOL
T
AGE (V)
1.2
2.4
I
C
/I
B
= 10
25
°
C
−
55
°
C
150
°
C
V
CE
= 10 V
25
°
C
−
55
°
C
150
°
C
25
°
C
−
55
°
C
150
°
C
25
°
C
−
55
°
C
150
°
C
V
O
= 5 V
V
O
= 0.2 V
f = 10 kHz
I
E
= 0 A
T
A
= 25
°
C
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
www
.onsemi.com
49
TYPICAL CHARACTERISTICS
−
PNP TRANSIST
OR
MUN5332DW1, NSBC143EPDXV6
75
°
C
25
°
C
−
25
°
C
Figure 83. V
CE(sat)
vs. I
C
Figure 84. DC Current Gain
Figure 85. Output Capacitance
Figure 86. Output Current vs. Input V
oltage
V
in
, INPUT VOL
T
AGE (V)
V
R
, REVERSE VOL
T
AGE (V)
Figure 87. Input V
oltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR
−
EMITTER VOL
T
AGE (V)
h
FE
, DC CURRENT GAIN
5
50
40
30
20
10
0
0
C
ob
, OUTPUT CAP
ACIT
ANCE (pF)
2
4
6
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (V)
75
°
C
25
°
C
T
A
=
−
25
°
C
75
°
C
25
°
C
T
A
=
−
25
°
C
75
°
C
25
°
C
T
A
=
−
25
°
C
0.01
0.01
0.1
30
8
10
V
CE
= 10 V
f = 10 kHz
l
E
= 0 A
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
1
3
7
9
I
C
/I
B
= 10
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
www
.onsemi.com
50
TYPICAL CHARACTERISTICS
−
NPN TRANSIST
OR
NSBC143EPDP6
Figure 88. V
CE(sat)
, vs. I
C
Figure 89. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
50
40
30
20
10
0
0.01
0.1
1
100
10
1
0.1
0.1
1
10
100
1000
Figure 90. Output Capacitance
Figure 91. Output Current vs. Input V
oltage
V
R
, REVERSE VOL
T
AGE (V)
V
in
, INPUT VOL
T
AGE (V)
50
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
2.4
4
3
2
1
0
0.01
0.1
1
10
100
Figure 92. Input V
oltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
50
40
30
20
10
0
0.1
1
10
V
CE(sat)
, COLLECTOR
−
EMITTER VOL
T
AGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOL
T
AGE (V)
I
C
/I
B
= 10
25
°
C
−
55
°
C
150
°
C
V
CE
= 10 V
25
°
C
−
55
°
C
150
°
C
25
°
C
−
55
°
C
150
°
C
25
°
C
−
55
°
C
150
°
C
V
O
= 5 V
V
O
= 0.2 V
f = 10 kHz
I
E
= 0 A
T
A
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P10
NSBC143EPDP6T5G
Mfr. #:
Buy NSBC143EPDP6T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
Lifecycle:
New from this manufacturer.
Delivery:
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