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NSVMUN5332DW1T1G

P1-P3P4-P6P7-P9P10-P10
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
www.onsemi.com
48
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5332DW1, NSBC143EPDXV6
Figure 78. V
CE(sat)
, vs. I
C
Figure 79. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
50403020100
0.01
0.1
1
1001010.1
0.1
1
10
100
1000
Figure 80. Output Capacitance Figure 81. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.6
2.0
2.8
3.2
3.6
543210
0.01
0.1
1
10
100
Figure 82. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
50403020100
0.1
1
10
100
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
1.2
2.4
I
C
/I
B
= 10
25°C
−55°C
150°C
V
CE
= 10 V
25°C
−55°C
150°C
25°C
−55°C
150°C
25°C −55°C
150°C
V
O
= 5 V
V
O
= 0.2 V
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
www.onsemi.com
49
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5332DW1, NSBC143EPDXV6
75°C
25°C
−25°C
Figure 83. V
CE(sat)
vs. I
C
Figure 84. DC Current Gain
Figure 85. Output Capacitance Figure 86. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE VOLTAGE (V)
Figure 87. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
I
C
, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
5
50403020100
0
C
ob
, OUTPUT CAPACITANCE (pF)
2
4
6
100
6543210
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
75°C
25°C
T
A
= −25°C
75°C
25°C
T
A
= −25°C
75°C
25°C
T
A
= −25°C
0.01
0.01
0.1
30
8
10
V
CE
= 10 V
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
1
3
7
9
I
C
/I
B
= 10
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
www.onsemi.com
50
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC143EPDP6
Figure 88. V
CE(sat)
, vs. I
C
Figure 89. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
50403020100
0.01
0.1
1
1001010.1
0.1
1
10
100
1000
Figure 90. Output Capacitance Figure 91. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.2
1.6
2.0
2.4
43210
0.01
0.1
1
10
100
Figure 92. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
50403020100
0.1
1
10
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
25°C
−55°C
150°C
V
CE
= 10 V
25°C
−55°C
150°C
25°C
−55°C
150°C
25°C
−55°C
150°C
V
O
= 5 V
V
O
= 0.2 V
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
P1-P3P4-P6P7-P9P10-P10

NSVMUN5332DW1T1G

Mfr. #:
Buy NSVMUN5332DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SC88 BR XSTR NPN 50V
Lifecycle:
New from this manufacturer.
Delivery:
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