OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NSR15TW1T2

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 1
1 Publication Order Number:
NSR15TW1/D
NSR15TW1
Triple RF
Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features:
• Low Capacitance (<1 pF)
• Low V
F
(390 mV typical @ 1 mA)
• Low V
F
(1 mV typical @ 1 mA)
Benefits:
• Reduced Parasitic Losses
• Accurate Signal Measurement
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Reverse Voltage V
R
15 V
Forward Current I
F
30 mA
Operating and Storage
Temperature Range
T
J
, T
stg
–65 to
+150
°C
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance –
Junction to Ambient
R
JA
500 °C/W
http://onsemi.com
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
NSR15TW1T2 SC–88 3000/Tape & Reel
1
2
3
SC–88
CASE 419B
STYLE 15
6
5
4
OZ = Specific Device Code
M = Date Code
OZ M
123
654
NSR15TW1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Breakdown Voltage (I
R
= 10 A) V
BR
15 20 – V
Reverse Leakage (V
R
= 1 V) I
R
– 2 50 nA
Forward Voltage (I
F
= 1 mA) V
F1
– 390 415 mV
Forward Voltage (I
F
= 10 mA) V
F2
– 530 680 mV
Delta V
F
(I
F
= 1 mA, All Diodes) V
F
– 1 15 mV
Capacitance (V
F
= 0 V, f = 1 MHz) C
T
– 0.8 1 pF
Figure 1. Forward Current versus Forward
Voltage at Temperatures
V
F
, FORWARD VOLTAGE (V)
100
10
1
0.1
0.70.60.50.40.30.20.10
Figure 2. Reverse Current versus Reverse
Voltage
V
R
, REVERSE VOLTAGE (V)
151050
10 k
1 k
100
10
1
0.01
100 k
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (nA)
Figure 3. Total Capacitance versus Reverse
Voltage
V
R
, REVERSE VOLTAGE (V)
1
0.9
0.7
0.6
86543210
Figure 4. Dynamic Resistance versus Forward
Current
I
F
, FORWARD CURRENT (mA)
1001010.1
100
10
1
0.5
1000
C
T
, CAPACITANCE (pF)
R
D
, DYNAMIC RESISTANCE ()
7
0.8
125°C –25°C
75°C
25°C
125°C
75°C
25°C
NSR15TW1
http://onsemi.com
3
Figure 5. Typical V
F
Match at Mixer Bias Levels
V
F
, FORWARD VOLTAGE (V)
100
10
1
0.1
0.70.60.50.40.3 0.8
Figure 6. Typical V
F
Match at Detector Bias Levels
V
F
, FORWARD VOLTAGE (V)
0.2250.175
100
10
I
F
, FORWARD CURRENT (mA)
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE DIFFERENCE (mV)
0.275 0.325
1
0.1
1
10
V
F
, FORWARD VOLTAGE DIFFERENTIAL (mV)
I
F
(left scale)
V
F
(right scale)
0.1
1
10
100
I
F
(left scale)
V
F
(right scale)
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
P
in
, INPUT POWER (dBm)
1
0.1
0.01
0–5–15–20–25–30–35–40
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MHz
P
in
, INPUT POWER (dBm)
15105–20
1
0.1
0.01
0.001
0.000001
0.001
10
V
DET
, (Vdc)
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
LOCAL OSCILLATOR POWER (dBm)
12
10
8
7
1286420–2
6
CONVERSION LOSS (dB)
10
9
–10 –15 –10 –5 0 302520
0.0001
0.00001
V
DET
, (Vdc)
18 nH
3.3 nH
V
O
RF IN
100 pF
100 k
NSR15TW1
68
V
O
RF IN
100 pF
4.7 k
NSR15TW1
DC Bias = 3 A
P1-P3P4-P4

NSR15TW1T2

Mfr. #:
Buy NSR15TW1T2
Manufacturer:
ON Semiconductor
Description:
DIODE ARRAY SCHOTTKY 15V SC88
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet