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2STN2340

P1-P3P4-P6P7-P9P10-P10
October 2009 Doc ID 14222 Rev 2 1/10
10
2STF2340
2STN2340
Low voltage fast-switching PNP power transistors
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
Applications
■ LED
■ Motherboard & hard disk drive
■ Mobile equipment
■ DC-DC converter
Description
The devices are PNP transistors manufactured
using new “PB-HDC” (power bipolar high density
current) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The 2STF2340 complementary PNP is the
2STF1340.
Figure 1. Internal schematic diagram
SOT-89
SOT-223
4
3
2
1
1
2
4
3
Table 1. Device summary
Order codes Marking Packages Packaging
2STF2340 2340 SOT-89 Tape and reel
2STN2340 N2340 SOT-223 Tape and reel
www.st.com
Electrical ratings 2STF2340, 2STN2340
2/10 Doc ID 14222 Rev 2
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter
Value
Unit2STF2340 2STN2340
SOT-89 SOT-223
V
CES
Collector-emitter voltage (V
BE
= 0) -40 V
V
CEO
Collector-emitter voltage (I
B
= 0) -40 V
V
EBO
Emitter-base voltage (I
C
= 0) -5 V
I
C
Collector current -3 A
I
CM
Collector peak current (t
P
< 5 ms) -6 A
P
TOT
Total dissipation at T
amb
= 25 °C 1.4 1.6 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter SOT-89 SOT-223 Unit
R
thJA
(1)
1. Device mounted on PCB area of 1 cm
2
Thermal resistance junction-ambient max 89 78 °C/W
2STF2340, 2STN2340 Electrical characteristics
Doc ID 14222 Rev 2 3/10
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= - 40 V -0.1 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= - 5 V -0.1 µA
V
(BR)CBO
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= - 100 µA -40 V
V
(BR)CEO
(1)
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= - 10 mA -40 V
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= - 100 µA -5 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= - 2 A I
B
= - 100 mA
I
C
= - 3 A I
B
= - 150 mA
-250
-350
mV
mV
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= - 2 A I
B
= - 100 mA -1.2 V
h
FE
(1)
DC current gain
I
C
= - 0.1 A V
CE
= - 2 V
I
C
= - 1 A V
CE
= - 2 V
I
C
= - 3 A V
CE
= - 2 V
100
180
220
450
f
t
Transition frequency
I
C
= - 0.1 A V
CE
= - 5 V
f = 100 MHz
100 MHz
C
CBO
Collector-base
capacitance (I
E
= 0)
V
CB
= - 10 V f = 1 MHz 50 pF
t
on
t
off
Resistive load
Turn-on time
Turn-off time
I
C
= - 1.5 A V
CC
= - 10 V
I
B(on)
= - I
B(off)
= - 150 mA
V
BB(off)
= 5 V
80
450
ns
ns
P1-P3P4-P6P7-P9P10-P10

2STN2340

Mfr. #:
Buy 2STN2340
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT LOW VOLTAGE FAST SWITCHING PNP POWER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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