OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SZMA3075WALT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2001
October, 2017 − Rev. 4
1 Publication Order Number:
MA3075WALT1/D
MA3075WALT1G,
SZMA3075WALT1G
Zener ESD Protection Diode
SOT−23 Dual Common Anode Zeners for
ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
• SOT−23 Package Allows Two Separate Unidirectional
Configurations
• Low Leakage < 1 mA @ 5.0 V
• Breakdown Voltage: 7.2−7.9 V @ 5 mA
• Low Capacitance (80 pF typical @ 0 V, 1 MHz)
• ESD Protection Meeting: 16 kV Human Body Model
ESD Protection Meeting: 30 kV Air and Contact Discharge
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 100 ms (Note 1)
P
pk
15 W
Steady State Power Dissipation
Derate above 25°C (Note 2)
°P
D
° 225
1.8
°mW°
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Maximum Junction Temperature
R
q
JA
417 °C/W
Operating Junction and Storage
Temperature Range
T
J
, T
stg
− 55 to +150 °C
ESD Discharge
MIL STD 883C − Method 3015−6
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
V
PP
16
30
30
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive 100 ms pulse width
2. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.
www.onsemi.com
SOT−23
CASE 318
STYLE 12
1
3
2
1
PIN 1. CATHODE
2. CATHODE
3. ANODE
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
MA3075WALT1G SOT−23
(Pb−Free)
3000 /
Tape & Reel
1
7W5 M G
G
7W5 = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SZMA3075WALT1G SOT−23
(Pb−Free)
3000 /
Tape & Reel
MA3075WALT1G, SZMA3075WALT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
Forward Voltage V
F
I
F
= 10 mA 0.8 0.9 V
Zener Voltage
*2
V
Z
I
Z
= 5 mA 7.2 7.5 7.9 V
Operating Resistance R
ZK
I
Z
= 0.5 mA 120
W
R
Z
I
Z
= 5 mA 6 15
W
Reverse Current I
R1
V
R
= 5 V 1
mA
I
R2
V
R
= 6.5 V 60
mA
Temperature Coefficient
of Zener Voltage
*3
S
Z
I
Z
= 5 mA 2.5 4.0 5.3 mV/°C
Terminal Capacitance C
t
V
R
= 0 V 80 pF
Product parametric performance is indicated in the Electrical Characteristics for the
listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
t
r
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 1. Steady State Power Derating Curve
TEMPERATURE (°C)
020406080
100
60
50
30
20
10
0
Figure 2. 8 X 20 ms Pulse Waveform
t, TIME (ms)
P
D
, POWER DISSIPATION (mW)
% OF PEAK PULSE CURRENT
40
90
80
70
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
PULSE WIDTH (t
p
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
t
p
10 100 1000
1000
100
10
1
Figure 3. Pulse Rating Curve
t
p
, PULSE WIDTH (ms)
0 0.2 0.4 0.6 1.2
100
1
0.1
0.01
Figure 4. Forward Current versus
Forward Voltage
V
F
, FORWARD VOLTAGE (V)
P
PK
, PEAK POWER (W)
I
F
, FORWARD CURRENT (mA)
10
0.8 1
T
A
= 85°C −40°C
25°C
Uni−Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MA3075WALT1G, SZMA3075WALT1G
www.onsemi.com
3
−60 20 100
1.2
0.8
0.4
0
Figure 5. Forward Voltage versus Temperature
T
A
, AMBIENT TEMPERATURE (°C)
01 2 3 8
1000
1
0.1
0.01
Figure 6. Leakage Current versus
Reverse Voltage
V
R
, REVERSE VOLTAGE (V)
V
F
, FORWARD VOLTAGE (V)
I
R
, LEAKAGE CURRENT (nA)
10
45
T
A
= 85°C
−40°C
25°C
0.2
0.6
1
−40 −20 0 40 60 80
I
F
= 100 mA
10 mA
3 mA
100
67
−60 20 100
1000
1
0.1
Figure 7. Leakage Current versus Temperature
T
A
, AMBIENT TEMPERATURE (°C)
5.5 6 6.5
100
0.1
0.01
0.001
Figure 8. Zener Current versus
Zener Voltage
V
Z
, ZENER VOLTAGE (V)
I
R
, LEAKAGE CURRENT (nA)
I
Z
, ZENER CURRENT (mA)
1
7 7.5
T
A
= −40°C
85°C
25°C
10
100
−40 −20 0 40 60 80
V
R
= 6 V
10
8 8.5
V
R
= 5 V
V
R
= 1 V
01
90
50
10
0
Figure 9. Capacitance
V
R
, REVERSE VOLTAGE (V)
0.1 1 100
100
1
0.1
Figure 10. Operating Resistance versus
Zener Current
I
Z
, ZENER CURRENT (mA)
Cd, CAPACITANCE (pF)
R
Z
, OPERATING RESISTANCE (W)
10
10
2345678
20
30
40
60
70
80
f = 1 MHz
T
A
= 25°C
P1-P3P4-P4

SZMA3075WALT1G

Mfr. #:
Buy SZMA3075WALT1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors SOT-23 3 SNGL CPR PBF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet