MPS750RLRAG Datasheet MPS651RLRAG, MPS750RLRPG, MPS651G | P1-P3

September, 2013 − Rev. 4

1 Publication Order Number:

MPS650/D

NPN - MPS650, MPS651;

PNP - MPS750, MPS751

Amplifier Transistors

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MPS650; MPS750

MPS651; MPS751

V

CE

40

60

Vdc

Collector−Base Voltage

MPS650; MPS750

MPS651; MPS751

V

CB

60

80

Vdc

Emitter−Base Voltage V

EB

5.0 Vdc

Collector Current − Continuous I

C

2.0 Adc

Total Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Power Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient V

CE

200 °C/W

Thermal Resistance, Junction−to−Case V

CB

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

COLLECTOR

3

2

BASE

1

EMITTER

NPN

PNP

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

AMPS

xxx

YWW G

G

xxx = 650, 750, 651, or 751

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

NPN − MPS650, MPS651; PNP − MPS750, MPS751

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= 10 mAdc, I

B

= 0) MPS650, MPS750

MPS651, MPS751

V

(BR)CEO

40

60

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0 ) MPS650, MPS750

MPS651, MPS751

V

(BR)CBO

60

80

−

Vdc

Emitter−Base Breakdown Voltage

(I

C

= 0, I

E

= 10 mAdc)

V

(BR)EBO

5.0 − Vdc

Collector Cutoff Current

(V

CB

= 60 Vdc, I

E

= 0) MPS650, MPS750

(V

CB

= 80 Vdc, I

E

= 0) MPS651, MPS751

I

CBO

−

0.1

mAdc

Emitter Cutoff Current

(V

EB

= 4.0 V, I

C

= 0)

I

EBO

− 0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 50 mA, V

CE

= 2.0 V)

(I

C

= 500 mA, V

CE

= 2.0 V)

(I

C

= 1.0 A, V

CE

= 2.0 V)

(I

C

= 2.0 A, V

CE

= 2.0 V)

h

FE

75

40

−

Collector−Emitter Saturation Voltage

(I

C

= 2.0 A, I

B

= 200 mA)

(I

C

= 1.0 A, I

B

= 100 mA)

V

CE(sat)

−

0.5

0.3

Vdc

Base−Emitter On Voltage

(I

C

= 1.0 A, V

CE

= 2.0 V)

V

BE(on)

− 1.0 Vdc

Base−Emitter Saturation Voltage

(I

C

= 1.0 A, I

B

= 100 mA)

V

BE(sat)

− 1.2 Vdc

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(I

C

= 50 mAdc, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

75 − MHz

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

2. f

T

is defined as the frequency at which |h

fe

| extrapolates to unity.

Figure 1. MPS650, MPS651

Typical DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

10

h

FE

, DC CURRENT GAIN

300

0

V

CE

= 2.0 V

T

J

= 125°C

25°C

-55°C

NPN

I

C

, COLLECTOR CURRENT (mA)

-10 -20 -50 -100 -200 -500

h

FE

, DC CURRENT GAIN

250

0

PNP

30

60

90

120

150

180

210

240

270

20 50 100 200 500 1.0 A 2.0 A 4.0 A

25

50

75

100

125

200

175

150

225

-1.0 A -2.0 A -4.0 A

V

CE

= -2.0 V

T

J

= 125°C

25°C

-55°C

Figure 2. MPS750, MPS751

Typical DC Current Gain

NPN − MPS650, MPS651; PNP − MPS750, MPS751

http://onsemi.com

3

I

C

, COLLECTOR CURRENT (mA)

50

V, VOLTAGE (VOLTS)

2.0

0

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 2.0 V

V

CE(sat)

@ I

C

/I

B

= 10

Figure 3. MPS650, MPS651

On Voltages

1.8

1.6

1.4

1.2

1.0

0.4

0.8

0.6

0.2

100 200 500 1.0 A 2.0 A 4.0 A

NPN

I

C

, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

0

Figure 4. MPS750, MPS751

On Voltages

-50

-2.0

-1.8

-1.6

-1.4

-1.2

-1.0

-0.4

-0.8

-0.6

-0.2

-100 -200 -500 -1.0 A -2.0 A -4.0 A

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

PNP

V

BE(on)

@ V

CE

= 2.0 V

Figure 5. MPS650, MPS651

Collector Saturation Region

I

B

, BASE CURRENT (mA)

0.05

1.0

0

NPN

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

T

J

= 25°C

I

C

= 10 mA I

C

= 100 mA I

C

= 500 mA I

C

= 2.0 A

-10

-4.0

-2.0

-1.0

-0.5

-0.2

-0.1

-0.02

-0.01

-1.0 -2.0 -5.0 -10 -20 -50 -100

100 ms

1.0 ms

T

A

= 25°C

T

C

= 25°C

MPS75

0

MPS75

1

WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

-0.05

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

PNP

I

B

, BASE CURRENT (mA)

PNP

Figure 6. MPS750, MPS751

Collector Saturation Region

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

T

J

= 25°C

I

C

= -10 mA I

C

= -100 mA

I

C

= -500 mA I

C

= -2.0 A

-0.05

-1.0

0

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500

10

4.0

2.0

1.0

0.5

0.2

0.1

0.05

0.02

0.01

I

C

, COLLECTOR CURRENT

1.0 2.0 5.0 10 20 50 100

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. MPS650, MPS651 SOA,

Safe Operating Area

T

A

= 25°C

1.0 ms

T

C

= 25°C

100 ms

MPS65

0

MPS65

1

WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

Figure 8. MPS750, MPS751 SOA,

Safe Operating Area

NPN

MPS750RLRAG

MPS750RLRAG

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