2STC4468

P1-P3 P4-P6 P7-P9 P10-P10

February 2012 Doc ID 13600 Rev 3 1/10

10

2STC4468

High power NPN epitaxial planar bipolar transistor

Features

■ High breakdown voltage V

CEO

= 140 V

■ Complementary to 2STA1695

■ Typical f

t

= 20 MHz

■ Fully characterized at 125 °C

Application

■ Audio power amplifier

Description

This device is an NPN transistor manufactured

using BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

exhibits good gain linearity behavior.

Recommended for 70 W to 100 W high fidelity

audio frequency amplifier output stages.

Figure 1. Internal schematic diagram

Table 1. Device summary

TO-3P

1

2

3

Order code Marking Package Packaging

2STC4468 2STC4468 TO-3P Tube

www.st.com

Electrical ratings 2STC4468

2/10 Doc ID 13600 Rev 3

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

Symbol Parameter Value Unit

V

CBO

Collector-base voltage (I

E

= 0) 200 V

V

CEO

Collector-emitter voltage (I

B

= 0) 140 V

V

EBO

Emitter-base voltage (I

C

= 0) 6 V

I

C

Collector current 10 A

I

CM

Collector peak current (t

P

< 5 ms) 20 A

P

tot

Total dissipation at T

c

= 25 °C 100 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Symbol Parameter Value Unit

R

thj-case

Thermal resistance junction-case max 1.25 °C/W

R

thj-amb

Thermal resistance junction-ambient max 35.7 °C/W

2STC4468 Electrical characteristics

Doc ID 13600 Rev 3 3/10

2 Electrical characteristics

(T

case

= 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

Collector cut-off current

(I

E

= 0)

V

CB

= 200 V 0.1 µA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 6 V 0.1 µA

V

(BR)CEO

(1)

Collector-emitter

breakdown voltage (I

B

= 0)

I

C

= 50 mA 140 V

V

(BR)CBO

Collector-base breakdown

voltage (I

E

= 0)

I

C

= 100 µA 200 V

V

(BR)EBO

(1)

Emitter-base breakdown

voltage (I

C

= 0)

I

E

= 1 mA 6 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 5 A I

B

= 500 mA

I

C

= 7 A I

B

= 700 mA

0.5

0.7

V

V

V

BE

Base-emitter voltage V

CE

= 5 V I

C

= 5 A 1.3 V

h

FE

DC current gain

I

C

= 3 A V

CE

= 4 V

I

C

= 5 A V

CE

= 4 V

70

50

140

f

T

Transition frequency I

C

= 0.5 A V

CE

= 12 V 20 MHz

C

CBO

Collector-base

capacitance (I

E

= 0)

V

CB

= 10 V f = 1 MHz 150 pF

t

on

t

stg

t

f

Resistive Load

Turn-on time

Storage time

Fall time

V

CC

= 60 V I

C

= 5 A

I

B1

= -I

B2

= 0.5 A

0.22

4.3

0.5

µs

µs

µs

1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %

P1-P3 P4-P6 P7-P9 P10-P10

2STC4468

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

TRANS NPN 140V 10A TO-3P

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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2STC4468