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IRGS4064DPBF

P1-P3P4-P6P7-P9P10-P11
IRGS4064DPbF
4 www.irf.com
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
0 5 10 15 20
V
GE
(V)
0
10
20
30
40
I
C
E
(
A
)
T
J
= 25°C
T
J
= 175°C
0246810
V
CE
(V)
0
10
20
30
40
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
F
(V)
0
10
20
30
40
50
60
70
80
I
F
(
A
)
-40°C
25°C
175°C
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.0A
I
CE
= 10A
I
CE
= 20A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.0A
I
CE
= 10A
I
CE
= 20A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.0A
I
CE
= 10A
I
CE
= 20A
IRGS4064DPbF
www.irf.com 5
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V.
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 10A; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 22Ω; V
GE
= 15V
Fig. 16- Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
Fig. 17 - Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18 - Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 10A
0 4 8 12162024
I
C
(A)
0
100
200
300
400
500
600
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 4 8 12 16 20 24
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 25 50 75 100 125
R
G
(
Ω
)
0
50
100
150
200
250
300
350
E
n
e
r
g
y
(
μ
J
)
E
ON
E
OFF
0 25 50 75 100 125
R
G
(
Ω
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 4 8 12 16 20 24
I
F
(A)
0
4
8
12
16
20
24
I
R
R
(
A
)
R
G =
100
Ω
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
0 25 50 75 100 125
R
G
(
Ω)
0
4
8
12
16
20
I
R
R
(
A
)
IRGS4064DPbF
6 www.irf.com
Fig. 20 - Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 19- Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
I
CE
= 10A; T
J
= 175°C
Fig. 24 - Typical Gate Charge
vs. V
GE
I
CE
= 10A, L=600μH
Fig. 23- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 22- Typ. V
GE
vs Short Circuit Time
V
CC
=400V, T
C
=25°C
Fig. 21 - Typical Diode E
RR
vs. I
F
T
J
= 175°C
0 200 400 600 800 1000 1200
di
F
/dt (A/μs)
5
10
15
20
I
R
R
(
A
)
0 2 4 6 8 10 12 14 16 18 20 22
I
F
(A)
0
50
100
150
200
250
300
I
R
R
(
A
)
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
R
G =
100
Ω
8 10121416
V
GE
(V)
0
2
4
6
8
10
12
14
16
T
i
m
e
(
μ
s
)
0
10
20
30
40
50
60
70
80
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
0 500 1000 1500
di
F
/dt (A/μs)
300
400
500
600
700
800
900
Q
R
R
(
n
C
)
10Ω
22
Ω
47
Ω
100
Ω
20A
10A
5.0A
0 4 8 12162024
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
300V
400V
0 20 40 60 80 100
V
CE
(V)
1
10
100
1000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
P1-P3P4-P6P7-P9P10-P11

IRGS4064DPBF

Mfr. #:
Buy IRGS4064DPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V Low VCEon Co-Pack IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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