IRGS4064DPbF
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 μH, R
G
= 22 Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely
Maximum limits are based on statistical sample size characterization
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100μA
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage — 0.47 — V/°C V
GE
= 0V, I
C
= 500μA (25°C-175°C)
—1.6 1.91 I
C
= 10A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.9 — V I
C
= 10A, V
GE
= 15V, T
J
= 150°C
5,6,7,9,
—2.0 — I
C
= 10A, V
GE
= 15V, T
J
= 175°C
10 , 11
V
GE (t h)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 275μA
Δ
V
GE(th)
/
Δ
TJ Threshold Voltage temp. coefficient — -11 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 6.9 — S V
CE
= 50V, I
C
= 10A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — — 25 μAV
GE
= 0V, V
CE
= 600V
—328 — V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
8
V
FM
Diode Forward Voltage Drop — 2.5 3.1 V I
F
= 10A
—1.7 — I
F
= 10A, T
J
= 175°C
I
GE S
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 21 32 I
C
= 10A
24
Q
ge
Gate-to-Emitter Charge (turn-on) — 5.3 8.0 nC V
GE
= 15V
CT 1
Q
gc
Gate-to-Collector Charge (turn-on) — 8.9 13 V
CC
= 400V
E
on
Turn-On Switching Loss — 29 40 I
C
= 10A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 200 281 μJR
G
= 22
Ω
, L = 1.0mH, T
J
= 25°C
CT 4
E
total
Total Switching Loss — 229 313
Energy loss es include tail & diode revers e recovery
t
d(on)
Turn-On delay time — 27 37 I
C
= 10A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 15 23 ns R
G
= 22
Ω
, L = 1.0mH, T
J
= 25°C
CT 4
t
d(off)
Turn-Off delay time — 79 90
t
f
Fall time — 21 29
E
on
Turn-On Switching Loss — 99 — I
C
= 10A, V
CC
= 400V, V
GE
= 15V
13 , 15
E
off
Turn-Off Switching Loss — 316 — μJR
G
=22Ω, L=1.0mH, T
J
= 175°C
CT 4
E
total
Total Switching Loss — 415 —
Energy loss es include tail & diode revers e recovery WF 1,WF 2
t
d(on)
Turn-On delay time — 27 — I
C
= 10A, V
CC
= 400V, V
GE
= 15V
14 , 16
t
r
Rise time — 16 — ns R
G
= 22
Ω
, L = 1.0mH, T
J
= 175°C
CT 4
t
d(off)
Turn-Off delay time — 98 —
WF 1,WF 2
t
f
Fall time — 33 —
C
ies
Input Capacitance — 594 — pF V
GE
= 0V
22
C
oes
Output Capacitance — 49 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 17 — f = 1.0Mhz
T
J
= 175°C, I
C
= 40A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
CT 2
Rg = 22
Ω
, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC
= 400V, Vp =600V
22, CT 3
Rg = 22
Ω
, V
GE
= +15V to 0V
WF 4
Erec Reverse Recovery Energy of the Diode — 191 — μJT
J
= 175°C
17 , 18 , 19
t
rr
Diode Reverse Recovery Time — 62 — ns V
CC
= 400V, I
F
= 10A
20,21
I
rr
Peak Reverse Recovery Current — 16 — A V
GE
= 15V, Rg = 22
Ω
, L=1.0mH
WF 3
CT 6
9,10,11, 12
Conditions
