©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BC635/637/639
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
• PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CER
Collector-Emitter Voltage at R
BE
=1KΩ
: BC635
: BC637
: BC639
45
60
100
V
V
V
V
CES
Collector-Emitter Voltage
: BC635
: BC637
: BC639
45
60
100
V
V
V
V
CEO
Collector-Emitter Voltage
: BC635
: BC637
: BC639
45
60
80
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 1 A
I
CP
Peak Collector Current 1.5 A
I
B
Base Current 100 mA
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC635
: BC637
: BC639
I
C
=10mA, I
B
=0
45
60
80
V
V
V
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 0.1 µA
h
FE1
h
FE2
h
FE3
DC Current Gain : All
: BC635
: BC637/BC639
: All
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
25
40
40
25
250
160
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=500mA, I
B
=50mA 0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
=2V, I
C
=500mA 1 V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA,
f=50MHz
100 MHz
BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
1. Emitter 2. Collector 3. Base
TO-92
1
