Electrical characteristics STF40NF06
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
60 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
± 100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
24V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 11.5A
0.024 0.028
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
= 30V, I
D
= 11.5A 12 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz,
V
GS
=0
920
225
80
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=48V, I
D
= 10A
V
GS
=10V
32
6.5
15
43
nC
nC
nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30V, I
D
= 20A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 13)
27
11
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 30V, I
D
= 20A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 13)
27
11
ns
ns
STF40NF06 Electrical characteristics
5/12
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 23 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 92 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=23A, V
GS
=0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=40A,
di/dt = 100A/µs,
V
DD
=10V, Tj=150°C
(see Figure 15)
63
150
4.8
ns
nC
A
Electrical characteristics STF40NF06
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance

STF40NF06

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 23 Amp
Lifecycle:
New from this manufacturer.
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