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ES1D-M3/5AT

P1-P3P4-P5
ES1A, ES1B, ES1C, ES1D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
1
Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 100 V, 150 V, 200 V
I
FSM
30 A
t
rr
15 ns
V
F
at I
F
0.92 V
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 105 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ES1A, ES1B, ES1C, ES1D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
2
Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1)
AEC_Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage
I
F
= 0.6 A V
F
(1)
0.865
V
I
F
= 1.0 A V
F
0.920
Maximum DC reverse current at rated DC
blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 100 °C 100
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, l
rr
= 0.25 A t
rr
15 ns
Maximum reverse recovery time
I
F
= 0.6 A, V
R
= 30 V, dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
25
ns
T
J
= 100 °C 35
Maximum stored charge
I
F
= 0.6 A, V
R
= 30 V, dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
10
nC
T
J
= 100 °C 25
Typical junction capacitance 4.0 V, 1 MHz C
J
10 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Typical thermal resistance
R
JA
(1)
85
°C/W
R
JL
(1)
35
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ES1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
ES1DHE3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
ES1DHE3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
ES1A, ES1B, ES1C, ES1D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
3
Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Thermal Impedance
0
1.2
80 90 100 110 120 130 140 150
0.8
1.0
0.2
0.4
0.6
Average Forward Rectified Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
1
10
100
5
10
15
20
25
30
0
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080100
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
T
J
= 25 °C
f = 1.0 MHz
V
sig = 50mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
14
12
10
8
6
4
2
0
0.1 1 10 100
Mounted on 0.2" x 0.2" (5 mm x 7 mm)
Copper Pad Areas
100
10
1
0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

ES1D-M3/5AT

Mfr. #:
Buy ES1D-M3/5AT
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1A,200V,15NS,UF Rect, SMD
Lifecycle:
New from this manufacturer.
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