OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

74HCT2G34GV-Q100H

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
74HC_HCT2G34_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 4 November 2013 6 of 15
NXP Semiconductors
74HC2G34-Q100; 74HCT2G34-Q100
Dual buffer gate
T
amb
= 40 C to +125 C
V
IH
HIGH-level input voltage V
CC
= 2.0 V 1.5 - - V
V
CC
= 4.5 V 3.15 - - V
V
CC
= 6.0 V 4.2 - - V
V
IL
LOW-level input voltage V
CC
= 2.0 V - - 0.5 V
V
CC
= 4.5 V - - 1.35 V
V
CC
= 6.0 V - - 1.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 - - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 - - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 - - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.7 - - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.2 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - - 0.4 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 6.0 V - - 1.0 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
- - 20.0 A
Table 7. Static characteristics for 74HC2G34-Q100
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Static characteristics for 74HCT2G34-Q100
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 25 C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 1.6 - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - 1.2 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 4.18 4.32 - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5V - 0.150.26V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - 0.1 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
--1.0A
I
CC
additional supply current V
I
= V
CC
2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 300 A
C
I
input capacitance - 1.5 - pF
74HC_HCT2G34_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 4 November 2013 7 of 15
NXP Semiconductors
74HC2G34-Q100; 74HCT2G34-Q100
Dual buffer gate
T
amb
= 40 C to +85 C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V 4.4 - - V
I
O
= 4.0 mA; V
CC
= 4.5 V 4.13 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.33 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - 1.0 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 10.0 A
I
CC
additional supply current V
I
= V
CC
2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 375 A
T
amb
= 40 C to +125 C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V 4.4 - - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.7 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.4 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - 1.0 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 20.0 A
I
CC
additional supply current V
I
= V
CC
2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 410 A
Table 8. Static characteristics for 74HCT2G34-Q100 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
74HC_HCT2G34_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 4 November 2013 8 of 15
NXP Semiconductors
74HC2G34-Q100; 74HCT2G34-Q100
Dual buffer gate
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
[2] t
t
is the same as t
TLH
and t
THL
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6
.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
74HC2G34-Q100
t
pd
propagation delay nA to nY; see Figure 5
[1]
V
CC
= 2.0 V; C
L
= 50 pF - 29 75 - 95 125 ns
V
CC
= 4.5 V; C
L
= 50 pF - 9 15 - 19 25 ns
V
CC
= 6.0 V; C
L
= 50 pF - 8 13 - 16 20 ns
t
t
transition time nY; see Figure 5
[2]
V
CC
= 2.0 V; C
L
= 50 pF - 18 75 - 95 125 ns
V
CC
= 4.5 V; C
L
= 50 pF - 6 15 - 19 25 ns
V
CC
= 6.0 V; C
L
= 50 pF - 5 13 - 16 20 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[3]
-10- - - -pF
74HCT2G34-Q100
t
pd
propagation delay nA to nY; see Figure 5
[1]
V
CC
= 4.5 V; C
L
= 50 pF - 10 18 - 23 29 ns
t
t
transition time nY; see Figure 5
[2]
V
CC
= 4.5 V; C
L
= 50 pF - 6 15 - 19 25 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
1.5 V
[3]
-9- - - -pF
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

74HCT2G34GV-Q100H

Mfr. #:
Buy 74HCT2G34GV-Q100H
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers Dual buffer gate
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet