NVD3055L170T4G-VF01

© Semiconductor Components Industries, LLC, 2014
May, 2017 − Rev. 7
1 Publication Order Number:
NTD3055L170/D
NTD3055L170,
NVD3055L170
Power MOSFET
9.0 A, 60 V, Logic Level, N−Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
±15
±20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
9.0
3.0
27
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
28.5
0.19
2.1
1.5
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 7.75 A, V
DS
= 60 Vdc)
E
AS
30 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
5.2
71.4
100
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad size.
9.0 AMPERES, 60 VOLTS
R
DS(on)
= 170 mW
N−Channel
D
S
G
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
1
2
3
4
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
1 − Gate
3 − Source
2 − Drain
4
Drain
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
www.onsemi.com
AYWW
31
70LG
AYWW
31
70LG
1 − Gate
3 − Source
2 − Drain
A = Assembly Location*
Y = Year
WW = Work Week
3170L = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD3055L170, NVD3055L170
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
53.6
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.7
4.2
2.0
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 4.5 Adc)
R
DS(on)
153 170
mW
Static Drain−to−Source On−Voltage (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 9.0 Adc)
(V
GS
= 5.0 Vdc, I
D
= 4.5 Adc, T
J
= 150°C)
V
DS(on)
1.8
1.3
2.1
Vdc
Forward Transconductance (Note 3) (V
DS
= 8.0 Vdc, I
D
= 6.0 Adc) g
FS
7.3 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
195 275
pF
Output Capacitance C
oss
70 100
Transfer Capacitance C
rss
29 42
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 9.0 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
9.7 20
ns
Rise Time t
r
69 150
Turn−Off Delay Time t
d(off)
10 20
Fall Time t
f
38 80
Gate Charge
(V
DS
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
4.7 10
nC
Q
1
1.4
Q
2
2.9
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 9.0 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 9.0 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
0.98
0.85
1.25
Vdc
Reverse Recovery Time
(I
S
= 9.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
29.8
ns
t
a
17.6
t
b
12.2
Reverse Recovery Stored Charge Q
RR
0.031
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD3055L170, NVD3055L170
www.onsemi.com
3
4
0.15
1612
0.1
0.05
0
820
0.2
0.35
2
4
2.2
1.6
1.2
1.4
1
0.8
0.6
1
100
1000
08
8
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
4
0.15
108
0.1
0.05
0
612
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
20
−50 50250−25 75 125100
1 2.5 6
0403020 6
0
10
3
4
12
8 V
V
DS
10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 100°C
V
GS
= 10 V
V
GS
= 15 V
150 175
V
GS
= 0 V
I
D
= 4.5 A
V
GS
= 5 V
16
0.2
0.35
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
18
T
J
= 150°C
T
J
= 100°C
4
0
16
8
12
3.5 4
T
J
= 25°C
T
J
= −55°C
50
10
6 V
5 V
4 V
3.5 V
3 V
1.8
4567 1.5 2 3 4.5 5 5.5
0.25
0.3
14 16
0.25
0.3
2
T
J
= 125°C

NVD3055L170T4G-VF01

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 60V 9A 1 70MOHM
Lifecycle:
New from this manufacturer.
Delivery:
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