SSM6N7002BFE,LM Datasheet SSM6N7002BFE,LM | P1-P3

SSM6N7002BFE

2014-03-01

1

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

SSM6N7002BFE

High-Speed Switching Applications

Analog Switch Applications

• Small package

• Low ON-resistance : R

DS(ON)

= 3.3 Ω (max) (@V

GS

= 4.5 V)

: R

DS(ON)

= 2.6 Ω (max) (@V

GS

= 5 V)

: R

DS(ON)

= 2.1 Ω (max) (@V

GS

= 10 V)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristics Symbol Rating Unit

Drain-source voltage V

DSS

60 V

Gate-source voltage V

GSS

±20 V

DC I

D

200

Drain current

Pulse I

DP

800

mA

Power dissipation P

D

(Note 1) 150 mW

Channel temperature T

ch

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135mm

2

× 6)

Marking Equivalent Circuit

(top view)

Unit: mm

0.12±0.05

0.55±0.05

0.2±0.05

6

1.2±0.05

1.6±0.05

1.0±0.05

1

2

0.50.5

3

1.6±0.05

5

4

JEDEC ―

JEITA ―

TOSHIBA 2-2N1D

Weight: 3.0 mg (typ.)

ES6

1.SOURCE1

2.GATE1

3.DRAIN2

4.SOURCE2

5.GATE2

6.DRAIN1

NM

6 5 4

1 2 3

654

123

Q1

Q2

Start of commercial production

2009-11

SSM6N7002BFE

2014-03-01

2

Electrical Characteristics

(Ta = 25°C)(Q1, Q2 Common)

Characteristics Symbol Test Condition Min Typ Max Unit

Gate leakage current I

GSS

V

GS

= ±20 V, V

DS

= 0 V ⎯ ⎯ ±10 μA

V

(BR) DSS

I

D

= 10 mA, V

GS

= 0 V 60 ⎯ ⎯

Drain-source breakdown voltage

V

(BR) DSX

I

D

= 10 mA, V

GS

= -10 V 45 ⎯ ⎯

V

Drain cutoff current I

DSS

V

DS

= 60 V, V

GS

= 0 V ⎯ ⎯ 1 μA

Gate threshold voltage V

th

V

DS

= 10 V, I

D

= 0.25 mA 1.5 ⎯ 3.1 V

Forward transfer admittance ⎪Y

fs

⎪ V

DS

= 10 V, I

D

= 200 mA (Note 2) 225 ⎯ ⎯ mS

I

D

= 500 mA, V

GS

= 10 V (Note 2) ⎯ 1.62 2.1

I

D

= 100 mA, V

GS

= 5 V (Note 2) ⎯ 1.90 2.6

Drain-source ON-resistance R

DS (ON)

I

D

= 100 mA, V

GS

= 4.5 V (Note 2) ⎯ 2.10 3.3

Ω

Input capacitance C

iss

⎯ 17.0 ⎯

Reverse transfer capacitance C

rss

⎯ 1.9 ⎯

Output capacitance C

oss

V

DS

= 25 V, V

GS

= 0 V, f = 1 MHz

⎯ 3.6 ⎯

pF

Turn-on delay time td

(on)

⎯ 3.3 6.6

Switching time

Turn-off delay time td

(off)

V

DD

= 30 V , I

D

= 200 mA,

V

GS

= 0 to 10 V

⎯ 14.5 40

ns

Drain-source forward voltage V

DSF

I

D

= -200 mA, V

GS

= 0 V (Note 2) ⎯ -0.84 -1.2 V

Note2: Pulse test

Switching Time Test Circuit

Precaution

Let V

th

be the voltage applied between gate and source that causes the drain current (I

D

)

to be low (0.25 mA for the

SSM6N7002BFE). Then, for normal switching operation, V

GS(on)

must be higher than V

th,

and V

GS(off)

must be lower

than V

th.

This relationship can be expressed as: V

GS(off)

< V

th

< V

GS(on).

Take this into consideration when using the device

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

Thermal resistance R

th (ch-a)

and Power dissipation P

D

vary depending on board material, board area, board thickness

and pad area. When using this device, please take heat dissipation into consideration.

(c) V

OUT

(b) V

IN

(a) Test circuit

td

(on)

90 %

10 %

0 V

10 V

90 %

10 %

td

(off)

t

r

t

f

V

DD

V

DS

(

ON

)

V

DD

= 30 V

Duty

≤ 1%

V

IN

: t

r

, t

f

< 2 ns

(Z

out

= 50 Ω)

Common Source

Ta = 25 °C

10 V

0

10 μs

V

DD

OUT

IN

50 Ω

R

L

SSM6N7002BFE

2014-03-01

3

(Q1, Q2 Common)

300

R

DS (ON)

– I

D

Drain current I

D

(mA)

Drain–source ON-resistance

R

DS (ON)

(Ω)

10 30

0

100 1000

5

1

VGS = 10 V

5.0 V

4.5 V

4

3

2

Common Source

Ta = 25°C

Ambient temperature Ta (°C)

R

DS (ON)

– Ta

Drain–source ON-resistance

R

DS (ON)

(Ω)

0

−50

0

50 150 100

5

2

Common Source

I

D

= 500 mA / V

GS

= 10 V

100 mA / 4.5 V

100 mA / 5.0V

4

3

1

Ambient temperature Ta (°C)

V

th

– Ta

Gate threshold voltage V

th

(V)

3.0

0

−50 0 150

2.0

50 100

1.0

Common Source

V

DS

= 10 V

I

D

= 0.25 mA

Gate–source voltage V

GS

(V)

I

D

– V

GS

Drain current I

D

(mA)

1000

0

10

100

0.1

1

0.01

5.0

4.0

-25 °C

2.0

3.0

1.0

Common Source

V

DS

= 10 V

25 °C

Ta = 100 °C

Drain–source voltage V

DS

(V)

I

D

– V

DS

Drain current I

D

(mA)

0

400

0

0.4 0.8 1.2 2.0

200

1.6

600

800

10 V

Common Source

Ta = 25 °C

7.0 V

3.5 V

VGS = 3.3 V

4.5 V

1000

5.0 V

4.0 V

Drain–source ON-resistance

R

DS (ON)

(Ω)

0

10

Gate–source voltage V

GS

(V)

0

R

DS (ON)

– V

GS

20

2

25 °C

5

Ta = 100 °C

-25 °C

I

D

= 100 mA

Common Source

Ta = 25°C

4

3

1

SSM6N7002BFE,LM

SSM6N7002BFE,LM

Products related to this Datasheet