2003 Jul 22 2
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
FEATURES
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a 4-lead, SOT123A
flange package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (V
GS
) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
PINNING - SOT123A
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
ok, halfpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25 °C in a common source test circuit.
Note
1. 2-tone efficiency.
MODE OF
OPERATION
f
(MH
Z
)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
3
(dB)
class-A 28 50 800 8 (PEP) >24 −<−40
class-AB 28 50 150 30 (PEP) typ. 24 typ. 40
(1)
typ. −35
CW, class-B 108 50 30 30 typ. 20 typ. 65 −
