SFH620A, SFH6206
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Vishay Semiconductors
Rev. 2.3, 31-Aug-15
4
Document Number: 83675
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature
Fig. 3 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
Fig. 4 - Diode Forward Voltage (Typ.) vs. Forward Current
Fig. 5 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 6 - Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
Fig. 7 - Permissible Power Dissipation vs. Ambient Temperature
(%)
10
3
10
2
10
1
- 25 7525050
T
A
(°C)
isfh620a_01
I
F
= 10 mA, V
CC
= 5 V
1
2
3
I
C
I
F
30
10
20
0
015105
V
CE
(V)
isfh620a_02
I
F
= 14 mA
I
F
= 12 mA
I
F
= 10 mA
I
F
= 6 mA
I
F
= 8 mA
I
F
= 4 mA
I
F
= 2 mAI
F
= 1 mA
I
C
(mA)
1.2
1.1
1.0
0.9
10
-1
10
1
10
0
isfh620a_03
V
F
= f (I
F
)
25 °C
50 °C
75 °C
I
F
(mA)
V
F
(V)
10
2
0
5
10
15
20
10
-2
10
-1
10
0
10
1
10
2
C (pF)
V
e
(V)
isfh620a_04
f = 1 MHz
C
CE
10
1
10
2
10
3
10
4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
isfh620a_05
t
p
I
F
T
T
D =
t
p
D = 0
0.005
0.01
0.02
Pulse cycle
D = parameter
t
p
I
F
0.05
0.1
0.2
0.5
DC
I
F
(mA)
t
p
(s)
0
50
100
150
200
0 50 1007525
isfh620a_06
Transistor
Diode
T
A
(°C)
P
tot
(mW)
