M48Z128, M48Z128Y DC and AC parameters
Doc ID 2426 Rev 6 13/20
4 DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Table 6. Operating and AC measurement conditions
Note: Output Hi-Z is defined as the point where data is no longer driven.
Figure 9. AC measurement load circuit
Table 7. Capacitance
Parameter M48Z128/Y Unit
Supply voltage (V
CC
) 4.75 to 5.5 V or 4.5 to 5.5 V
Ambient operating temperature (T
A
)0 to 70°C
Load capacitance (C
L
) 100 pF
Input rise and fall times 5ns
Input pulse voltages 0 to 3 V
Input and output timing ref. voltages 1.5 V
Symbol Parameter
(1)(2)
1. Effective capacitance measured with power supply at 5 V; sampled only, not 100% tested.
2. At 25 °C, f = 1 MHz.
Min Max Unit
C
IN
Input capacitance - 10 pF
C
IO
(3)
3. Outputs deselected.
Input / output capacitance - 10 pF
AI03630
C
L
= 100pF
C
L
includes JIG capacitance
650Ω
DEVICE
UNDER
TEST
1.75V
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DC and AC parameters M48Z128, M48Z128Y
14/20 Doc ID 2426 Rev 6
Table 8. DC characteristics
Sym Parameter Test condition
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted).
M48Z128/Y
Unit–70 / –85 / –120
Min Max
I
LI
Input leakage current 0 V V
IN
V
CC
±1 µA
I
LO
(2)
2. Outputs deselected.
Output leakage current 0 V V
OUT
V
CC
±1 µA
I
CC
Supply current
E
= V
IL
Outputs open
105 mA
I
CC1
Supply current (standby) TTL E = V
IH
7mA
I
CC2
Supply current (standby) CMOS E = V
CC
– 0.2 V 4 mA
V
IL
Input low voltage –0.3 0.8 V
V
IH
Input high voltage 2.2 V
CC
+ 0.3 V
V
OL
Output low voltage I
OL
= 2.1 mA 0.4 V
V
OH
Output high voltage I
OH
= –1 mA 2.4 V
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M48Z128, M48Z128Y DC and AC parameters
Doc ID 2426 Rev 6 15/20
Figure 10. Power down/up mode AC waveforms
Table 9. Power down/up AC characteristics
Table 10. Power down/up trip points DC characteristics
Symbol Parameter
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
Min Max Unit
t
F
(2)
2. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring
until 200 µs after V
CC
passes V
PFD
(min).
V
PFD
(max) to V
PFD
(min) V
CC
fall time 300 µs
t
FB
(3)
3.V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
V
PFD
(min) to V
SS
V
CC
fall time 10 µs
t
R
V
PFD
(min) to V
PFD
(max)
V
CC
rise time 10 µs
t
RB
V
SS
to V
PFD
(min) V
CC
rise time 1 µs
t
WP
Write protect time 40 150 µs
t
ER
E recovery time 40 120 ms
Symbol Parameter
(1)(2)
1. All voltages referenced to V
SS
.
2. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
Min Typ Max Unit
V
PFD
Power-fail deselect voltage
M48Z128 4.5 4.6 4.75 V
M48Z128Y 4.2 4.3 4.5 V
V
SO
Battery backup switchover voltage M48Z128/Y 3.0 V
t
DR
(3)
3. At 25 °C; V
CC
= 0 V.
Expected data retention time 10 YEARS
AI01031
V
CC
E
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tRB
tWP
tDR
VALID VALID
(PER CONTROL INPUT)
RECOGNIZEDRECOGNIZED
V
PFD
(max)
V
PFD
(min)
V
SO
tER
Obsolete Product(s) - Obsolete Product(s)

M48Z128Y-70PM1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC NVSRAM 1M PARALLEL 32PMDIP
Lifecycle:
New from this manufacturer.
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