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3STF1640

P1-P3P4-P6P7-P9P10-P12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
April 2013 DocID023648 Rev 3 1/12
12
3STF1640
Low voltage high performance NPN power transistor
Datasheet
-
preliminary data
Figure 1. Internal schematic diagram
Features
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast switching speed
Applications
• Power management
• DC-DC converters
• Automotive
Description
This device is a NPN transistor manufactured
using new low voltage planar technology with
double metal process. The result is a transistor
which boasts exceptionally high gain performance
coupled with very low saturation voltage.
SOT-89
3
2
1
4
Table 1. Device summary
Order codes Marking Package Packaging
3STF1640 1640 SOT-89 Tape and reel
www.st.com
Contents 3STF1640
2/12 DocID023648 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID023648 Rev 3 3/12
3STF1640 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 40 V
V
CEO
Collector-emitter voltage (I
B
= 0) 40 V
V
EBO
Emitter-base voltage (I
C
= 0) 7 V
I
C
Collector current 6 A
I
CM
Collector peak current (t
P
< 1 ms) 20 A
P
tot
Total dissipation at T
amb
= 25 °C 1.5 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJA
(1)
1. Device mounted on PCB area of 1 cm²
Thermal resistance junction-ambient max 83 °C/W
P1-P3P4-P6P7-P9P10-P12

3STF1640

Mfr. #:
Buy 3STF1640
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT Low voltage high performance NPN power transistor
Lifecycle:
New from this manufacturer.
Delivery:
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