1/10March 2002
.
STD30NF06
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK
STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.020Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD30NF06 60 V <0.028
Ω
28 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area. (1) I
SD
≤
28A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
28 A
I
D
Drain Current (continuous) at T
C
= 100°C
20 A
I
DM
(
•)
Drain Current (pulsed) 112 A
P
tot
Total Dissipation at T
C
= 25°C
70 W
Derating Factor 0.47 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 10 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 230 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
