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BYW77PI-200RG

P1-P3P4-P6
BYW77P/PI-200
®
October 1999 Ed : 2C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SOD93
(Plastic)
BYW77P-200
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
DESCRIPTION
FEATURES
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in SOD93, or DOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
isolated
DOP3I
(Plastic)
BYW77PI-200
Symbol Parameter Value Unit
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current
δ
= 0.5
SOD93 Tc=125°C
25 A
TOP3I Tc=100°C
25
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
500 A
Tstg
Tj
Storage and junction temperature range - 40 to + 150
- 40 to + 150
°
C
°
C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
K
A
1/5
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Symbol Test Conditions Min. Typ. Max. Unit
I
R
*T
j
= 25
°
CV
R
= V
RRM
25
µ
A
T
j
= 100
°
C2.5mA
V
F **
T
j
= 125
°
CI
F
= 20 A 0.85 V
T
j
= 125
°
CI
F
= 40 A
1.00
T
j
= 25
°
CI
F
= 40 A 1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.0075 x I
F
2
(RMS)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
= 25
°
CI
F
= 0.5A
I
R
= 1A
Irr = 0.25A 35 ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
µ
s50
tfr T
j
= 25
°
CI
F
= 1A
V
FR
= 1.1 x V
F
tr = 5 ns 10 ns
V
FP
T
j
= 25
°
CI
F
= 1A tr = 5 ns 1.5 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junction to case
SOD93
1.0
°
C/W
DOP3I
1.8
THERMAL RESISTANCE
BYW77P/PI-200
2/5
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0
100
200
300
400
500
I
M(A)
P=20W
P=30W
P=40W
T
I
M
=tp/T
tp
Fig.2 :
Peak current versus form factor.
Tj=125 C
o
IFM(A)
0.1 1 10 100 300
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 :
Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp. )
K=
Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T
tp
1.0E-03 1.0E-02 1.0E-01
1.0E+00
K
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
0 5 10 15 20 25 30
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
I
F(av)(A)
P
F(av)(W)
=1
Fig.1 :
Average forward power dissipation versus
average forward current.
0.001 0.01 0.1 1
0
50
100
150
200
250
IM
t
=0.5
t(s)
I
M(A)
Tc=25 C
o
Tc=50 C
o
Tc=100 C
o
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(BYW81PI)
0.001 0.01 0.1 1
0
50
100
150
200
250
300
IM
t
=0.5
t(s)
I
M(A)
Tc=25 C
o
Tc=75 C
o
Tc=125 C
o
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
BYW77P/PI-200
3/5
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6

BYW77PI-200RG

Mfr. #:
Buy BYW77PI-200RG
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 200V 25A DOP3I
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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