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PC81710NIP0F

P1-P3P4-P6P7-P9P10-P12P13-P14
Sheet No.: D2-A03302EN
Relative current transfer ratio (%)
Ambient temperature T
a
(˚C)
−30 1009080706050403020100−10−20
V
CE
=5V
I
F
=0.5mA
0
150
100
50
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
Collector-emitter saturation voltage V
CE (sat)
(V)
Ambient temperature T
a
(˚C)
0
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
I
F
=10mA
I
C
=1mA
−30 1009080706050403020100−10−20
Fig.11 Collector - emitter Saturation Voltage
vs. Ambient Temperature
7
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0
40
0246810
T
a
=25˚C
30
20
10
P
C
(MAX.)
I
F
=7mA
I
F
=5mA
I
F
=3mA
I
F
=2mA
I
F
=1mA
I
F
=0.5mA
Fig.9 Collector Current vs. Collector-emitter
Voltage
Current transfer ratio CTR (%)
Forward current I
F
(mA)
0.1 1 10
0
800
700
600
500
400
300
200
100
V
CE
=5V
T
a
=25˚C
Fig.8 Current Transfer Ratio vs. Forward
Current
Forward current I
F
(mA)
0.1
1
10
100
0 0.5 1.0 1.5 2.0
Forward voltage V
F
(V)
T
a
=25˚C
T
a
=75˚C
T
a
=100˚C
T
a
=50˚C
T
a
=0˚C
T
a
=−25˚C
Fig.7 Forward Current vs. Forward Voltage
Peak forward current I
FM
(mA)
Duty ratio
10
1 000
100
10
−2
10
−3
10
−1
1
Pulse width≤100µs
T
a
=25˚C
Fig.6 Peak Forward Current vs. Duty Ratio
PC8171xNSZ0F Series
Sheet No.: D2-A03302EN
8
Voltage gain A
V
(dB)
−25
5
0.1 1 10 100 1 000
Frequency f (kHz)
V
CE
=2V
I
C
=2mA
T
a
=25˚C
0
−5
−10
−15
−20
R
L
=10kΩ
1kΩ
100Ω
Fig.16 Frequency Response
Ambient temperature T
a
(˚C)
−30 1009080706050403020100−10−20
V
CE
=50V
10
−11
10
−5
10
−6
10
−7
10
−8
10
−9
10
−10
Collector dark current I
CEO
(A)
Fig.12 Collector Dark Current vs. Ambient
Temperature
Load resistance R
L
(kΩ)
0.1
1
10
100
V
CE
=2V, I
C
=2mA
1
tf
ts
tr
td
10
Responce time (µs)
Fig.13 Response Time vs. Load Resistance
(active region)
10%
Input
Output
Input
Output
90%
t
s
t
d
V
CC
R
D
R
L
t
f
t
r
Please refer to the conditions in Fig.13 and Fig.14.
V
CE
Fig.15 Test Circuit for Response Time
Load resistance R
L
(kΩ)
1
1
10
100
1 000
V
cc
=5V, I
F
=1mA, T
a
=25˚C
10
tf
ts
tr
td
100
Responce time (µs)
Fig.14 Response Time vs. Load Resistance
(saturation region)
Collector-emitter saturation voltage V
CE (sat)
(V)
Forward current I
F
(mA)
0
5
0246810
T
a
=25˚C
4
3
2
1
I
C
=7mA
I
C
=5mA
I
C
=3mA
I
C
=2mA
I
C
=1mA
I
C
=0.5mA
Fig.17 Collector-emitter Saturation Voltage
vs. Forward Current
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
PC8171xNSZ0F Series
Sheet No.: D2-A03302EN
■ Design Considerations
While operating at I
F
<0.5mA, CTR variation may increase.
Please make design considering this fact.
In case that some sudden big noise caused by voltage variation is provided between primary and secondary
terminals of photocoupler some current caused by it is floating capacitance may be generated and result in
false operation since current may go through IRED or current may change.
If the photocoupler may be used under the circumstances where noise will be generated we recommend to
use the bypass capacitors at the both ends of IRED.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Recommended Foot Print (reference)
✩
For additional design assistance, please review our corresponding Optoelectronic Application Notes.
9
2.2
2.54
1.7
8.2
(Unit : mm)
● Design guide
PC8171xNSZ0F Series
P1-P3P4-P6P7-P9P10-P12P13-P14

PC81710NIP0F

Mfr. #:
Buy PC81710NIP0F
Manufacturer:
Sharp Microelectronics
Description:
Transistor Output Optocouplers SMT PC81710NSZ0F
Lifecycle:
New from this manufacturer.
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