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NSVT65010MW6T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 0
1 Publication Order Number:
NST65010MW6/D
NST65010MW6
Dual Matched General
Purpose Transistor
PNP Matched Pair
These transistors are housed in an ultra−small SOT−363 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Complementary NPN equivalent NST65011MW6T1G is available.
Features
• Current Gain Matching to 10%
• Base−Emitter Voltage Matched to ≤ 2 mV
• Drop−In Replacement for Standard Device
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−65 V
Collector−Base Voltage V
CBO
−80 V
Emitter−Base Voltage V
EBO
−5.0 V
Collector Current − Continuous I
C
−100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
P
D
380
250
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
q
JA
328 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
SOT−363
CASE 419B
STYLE 1
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NST65010MW6T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MARKING DIAGRAMS
4G = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
1
6
4G MG
G
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
NSVT65010MW6T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
NST65010MW6
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I
C
= −10 mA) V
(BR)CEO
−65 − − V
Collector−Emitter Breakdown Voltage, (I
C
= −10 mA, V
EB
= 0)
V
(BR)CES
−80 − − V
Collector−Base Breakdown Voltage, (I
C
= −10 mA)
V
(BR)CBO
−80 − − V
Emitter−Base Breakdown Voltage, (I
E
= −1.0 mA)
V
(BR)EBO
−5.0 − − V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current (V
CB
= −30 V, T
A
= 150°C)
I
CBO
−
−
−
−
−15
−5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V) (Note 2)
h
FE
h
FE(1)/
h
FE(2)
−
220
0.9
150
290
1.0
−
475
1.1
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−300
−650
mV
Base−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−700
−900
−
−
mV
Base−Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V) (Note 3)
V
BE(on)
V
BE(1)
−
V
BE(2)
−600
−
−
−
−
−1.0
−750
−820
−2.0
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product, (I
C
= −10 mA, V
CE
= −5 Vdc, f = 100 MHz) f
T
100 − − MHz
Output Capacitance, (V
CB
= −10 V, f = 1.0 MHz) C
ob
− − 4.5 pF
Noise Figure, (I
C
= −0.2 mA, V
CE
= −5 Vdc, R
S
= 2 kW, f = 1 kHz, BW = 200Hz)
NF − − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. h
FE(1)
/h
FE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
FE
is used as numerator.
3. V
BE(1)
− V
BE(2)
is the absolute difference of one transistor compared to the other transistor within the same package.
NST65010MW6
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
I
C
, COLLECTOR CURRENT (mAdc)
-0.2
0.2
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
0
-0.2
-0.4
-0.1
-0.3
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
h
FE
, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
-0.2
-10 -100
-1.0
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE
= -10 V
T
A
= 25°C
-55°C to +125°C
I
C
= -100 mA
I
C
= -20 mA
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1
-0.2 -0.5
-1.0
-2.0 -5.0
-10
-20 -50
-100
I
C
= -200 mAI
C
= -50 mAI
C
=
-10 mA
Figure 5. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
T
A
= 25°C
C
ob
C
ib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
V
CE
= -10 V
T
A
= 25°C
T
A
= 25°C
1.0
P1-P3P4-P5

NSVT65010MW6T1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT Dual Matched PNP Tra
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