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AOT298L

P1-P3P4-P6P7-P7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 4 8 12 16 20
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
0 20 40 60 80 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
C
oss
C
rss
V
DS
=50V
I
D
=20A
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT298L and AOB298L (Note F)
10
µ
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
40
for AOT298L and AOB298L (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT298L and AOB298L (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area for AOT298L and AOB298L (Note F)
R
θJC
=1.5°C/W
Rev.4.0: July 2016 www.aosmd.com Page 4 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF298L
(Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case for
AOTF298L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
R
θJC
=4.5°C/W
0
10
20
30
40
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(
°
C)
Figure 16: Power De-rating for AOTF298L (Note
F)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(
°
C)
Figure 15: Current De-rating for AOTF298 (Note
F)
Rev.4.0: July 2016 www.aosmd.com Page 5 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
30
60
90
120
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°C)
Figure 18: Power De-rating for AOT298L and
AOB298L (Note F)
0
20
40
60
80
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°C)
Figure 17: Current De-rating for AOT298L and
AOB298L (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 20: Single Pulse Power Rating Junction
-
to
-
T
A
=25°C
10
100
1 10 100
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(
µ
s)
Figure 19: Single Pulse Avalanche capability
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 20: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
R
θJA
=60°C/W
Figure 19: Single Pulse Avalanche capability
(Note C)
Rev.4.0: July 2016 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AOT298L

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Buy AOT298L
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Description:
MOSFET N-CH 100V 9A TO220
Lifecycle:
New from this manufacturer.
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