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NCV8613BMNR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25
NCV8613B
http://onsemi.com
4
MAXIMUM RATINGS (Voltages are with respects to GND unless noted otherwise)
Rating
Symbol Max Min Unit
Maximum DC Voltage VIN−B, VIN−A, ASO_RAIL,
VBATT_MON, VIN_S3, EN, IGNIN
40 −0.3 V
Peak Transient VIN−B, VIN−A, ASO_RAIL,
VBATT_MON, VIN_S3, EN, IGNIN
45 −0.3 V
Maximum DC Voltage VIN−H 24 −0.3 V
Maximum DC Voltage IGNOUT, V
PP
, HV_DET, BO_DET,
HOT_FLG, RST, DLY, V
OUT1
, V
OUT2
, V
OUT3
7 −0.3 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL INFORMATION
Rating Symbol Min Unit
Thermal Characteristic (Note 1)
R
q
JA
40 °C/W
Operating Junction Temperature Range T
J
−40 to 150 °C
Maximum Storage Temperature Range T
STG
−55 to +150 °C
Moisture Sensitivity Level MSL 1
1. Values based on measurement of NCV8613B assembled on 2−layer 1−oz Cu thickness PCB with Copper Area of more than 645 mm
2
with
several thermal vias for improved thermal performance. Refer to CIRCUIT DESCRIPTION section for safe operating area.
ATTRIBUTES
Rating Symbol Min Unit
ESD Capability, Human Body Model (Note 2) ESD
HB
2 kV
ESD Capability, Machine Model (Note 2) ESD
MM
200 V
ESD Capability, Charged Device Model (Note 2) ESD
CDM
1 kV
IGNIN ESD Capability, Human Body Model (Note 2) ESD
HB
_IGNIN 3 kV
IGNIN ESD Capability, Machine Model (Note 2) ESD
MM
_IGNIN 200 V
IGNIN ESD Capability (Note 3) ESD_IGNIN 10 kV
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model (CDM) tested per EIA/JES D22/C101, Field Induced Charge Model
3. Device tested with external 10 kW series resistance and 1 nF storage capacitor.
NCV8613B
http://onsemi.com
5
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H
= VIN−B w ASO_RAIL, V
PP
= 5 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, IGNIN = 0 V, I
SYS
= 3 mA (Note 6))
Minimum/Maximum values are valid for the temperature range −40°C v T
J
v 150°C unless noted otherwise. Min/Max values are
guaranteed by test, design or statistical correlation.
Parameter
Symbol Conditions Min Typ Max Unit
SUPPLY RAILS
Quiescent Current (Notes 4 and 6)
i
q
T
J
= 25°C, I
SYS
= 70 mA, VIN−A =
VIN_S3 = 0 V, VIN−B = 13.2 V
34 50
mA
Minimum Operating Voltage
(VIN−H, VIN−B)
4.5 V
THERMAL MONITORING
Thermal Warning (HOT_FLG)
Temperature
T
WARN
140 150 160 °C
T
WARN
Hysteresis 10 20 °C
Thermal Shutdown 160 170 180 °C
Thermal Shutdown Hysteresis 10 20 °C
Delta Junction Temperature
(TSD − T
WARN
)
10 20 30 °C
HOT_FLG Voltage Low
T
J
< T
WARN
, 10 kW Pullup to 3.3 V
0.4 V
HOT_FLG Voltage High
T
J
> T
WARN
, 10 kW Pulldown to GND
V
PP
−0.5 V
AUTO SWITCHOVER
VIN−A Quiescent Current
24
mA
VIN−A to VIN−B Risetime
T
J
= 25°C, C
ASO_RAIL
= 1 mF,
I
SYS
= 400 mA
200
msec
VIN−B to VIN−A Falltime
T
J
= 25 °C, C
ASO_RAIL
= 1 mF,
I
SYS
= 400 mA
100
msec
VIN−A Operating Threshold VIN−A Rising 7.2 7.5 7.75 V
VIN−A Operating Hysteresis VIN−A Falling 100 175 250 mV
Max VIN−B to V
ASO_RAIL
Voltage Drop I
SYS
= 400 mA, VIN−B = 7 V 1.5 V
Max VIN−H to V
ASO_RAIL
Voltage Drop I
SYS
= 400 mA, VIN−H = 7.5 V 2.0 V
RESET (RST Pin)
RESET Threshold
% of V
OUT2
90 93 96 %
Hysteresis % of V
OUT2
2.5 %
Reset Voltage High
10 kW Pulldown to GND
V
PP
−0.5 V
Reset Voltage Low
10 kW Pullup to 3.3 V
0.4 V
DELAY (DLY Pin)
Charge Current
2.4 5 7
mA
Delay Trip Point Voltage 2.0 V
IGNITION BUFFER
Schmitt Trigger Rising Threshold
2.75 3.25 3.75 V
Schmitt Trigger Falling Threshold 0.8 1.0 1.2 V
IGNOUT Voltage Low
IGNIN = 5 V, 10 kW Pullup to 5 V
0.4 V
IGNOUT Leakage Current T
J
= 25°C, IGNOUT = 5 V 0.1 0.5
mA
VBATT MONITOR
VBATT_MON Quiescent Current
T
J
= 25°C, VBATT_MON = 13.2 V 3 5
mA
VBATT_MON Minimum Operating Voltage Threshold where BO_DET and HV_DET
signals become valid
1.0 2.0 2.5 V
NCV8613B
http://onsemi.com
6
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H
= VIN−B w ASO_RAIL, V
PP
= 5 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, IGNIN = 0 V, I
SYS
= 3 mA (Note 6))
Minimum/Maximum values are valid for the temperature range −40°C v T
J
v 150°C unless noted otherwise. Min/Max values are
guaranteed by test, design or statistical correlation.
Parameter UnitMaxTypMinConditionsSymbol
VBATT MONITOR
VBATT_MON Hysteresis
0.25 V
HV_DET Voltage High
10 kW Pulldown to GND
VBATT_MON Tied to ASO_RAIL
V
PP
−0.5 V
HV_DET Voltage Low
10 kW Pullup to 3.3 V
VBATT_MON Tied to ASO_RAIL
0.4 V
HV_DET Threshold VBATT_MON Rising 16.2 17.8 V
HV_DET Hysteresis VBATT_MON Falling 0.2 0.35 0.5 V
BO_DET Voltage High
10 kW Pulldown to GND
VBATT_MON Tied to ASO_RAIL
V
PP
−0.5 V
BO_DET Voltage Low
10 kW Pullup to 3.3 V
VBATT_MON Tied to ASO_RAIL
0.4 V
BO_DET Threshold VBATT_MON Falling 7 7.5 8 V
BO_DET Hysteresis VBATT_MON Rising 0.2 0.35 0.5 V
VPP PIN
VPP Voltage Range
3 5 6 V
Leakage Current T
J
= 25°C 0.1 0.5
mA
4. i
q
is equal to I
VIN−B
+ I
VIN−H
− I
SYS
5. I
SHDN
is equal to I
VIN−B
+ I
VIN−H
6. I
SYS
is equal to I
OUT1
+ I
OUT2
+ I
OUT3
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25

NCV8613BMNR2G

Mfr. #:
Buy NCV8613BMNR2G
Manufacturer:
ON Semiconductor
Description:
Linear Voltage Regulators ANA MULTIPLE OUTPUT LDO
Lifecycle:
New from this manufacturer.
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