IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 48N60P IXFX 48N60P
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test 35 53 S
C
iss
8860 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 850 pF
C
rss
60 pF
t
d(on)
30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 I
D25
25 ns
t
d(off)
R
G
= 2 Ω (External) 85 ns
t
f
22 ns
Q
g(on)
150 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50 nC
Q
gd
50 nC
R
thJC
0.15 ° C/W
R
thCs
TO-264 and PLUS247 0.15 ° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 48 A
I
SM
Repetitive 110 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 25A, -di/dt = 100 A/µs 200 ns
Q
RM
V
R
= 100V 0.8 µC
I
RM
6.0
A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-264 (IXFK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
(IXFX) Outline
