IXBF12N300 Datasheet IXBF12N300 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 3000 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 3000 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 26 A

I

C110

T

C

= 110°C 11 A

I

CM

T

C

= 25°C, 1ms 98 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 20Ω I

CM

= 98 A

(RBSOA) Clamped Inductive Load 1500 V

P

C

T

C

= 25°C 125 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

F

C

Mounting Force 20..120 / 4.5..27 Nm/lb.in.

V

ISOL

50/60Hz, 1 Minute 4000 V~

Weight 5 g

DS100121B(06/12)

IXBF12N300

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 3000 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 25 μA

Note 2, T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15V, Note 1 2.8 3.2 V

T

J

= 125°C 3.5 V

V

CES

= 3000V

I

C110

= 11A

V

CE(sat)

≤≤

≤ 3.2V

High Voltage, High Gain

BIMOSFET

TM

Monolithic

Bipolar MOS Transistor

(Electrically Isolated Tab)

1 = Gate 5 = Collector

2 = Emitter

ISOPLUS i4-Pak

TM

Isolated Tab

1

5

2

Features

z

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

z

Isolated Mounting Surface

z

4000V~ Electrical Isolation

z

High Blocking Voltage

z

High Peak Current Capability

z

Low Saturation Voltage

Advantages

z

Low Gate Drive Requirement

z

High Power Density

Applications

z

Switch-Mode and Resonant-Mode

Power Supplies

z

Capacitor Discharge Circuits

z

Uninterrupted Power Supplies(UPS)

z

Laser Drivers

z

AC Switches

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF12N300

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= I

C90

, V

CE

= 10V, Note 1 6.5 10.8 S

C

ies

1290 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 56 pF

C

res

19 pF

Q

g

62 nC

Q

ge

I

C

= I

C90

, V

GE

= 15V, V

CE

= 1000V 13 nC

Q

gc

8.5 nC

t

d(on)

64 ns

t

r

140 ns

t

d(off)

180 ns

t

f

540 ns

t

d(on)

65 ns

t

r

395 ns

t

d(off)

175 ns

t

f

530 ns

R

thJC

1.00 °C/W

R

thCS

0.15 °C/W

Resistive Switching Times, T

J

= 125°C

I

C

= I

C90

, V

GE

= 15V

V

CE

= 1250V, R

G

= 10Ω

Resistive Switching Times, T

J

= 25°C

I

C

= I

C90

V

GE

= 15V

V

CE

= 1250V, R

G

= 10Ω

Reverse Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 12A, V

GE

= 0V 2.1 V

t

rr

1.4 μs

I

RM

21 A

I

F

= 6A, V

GE

= 0V, -di

F

/dt = 100A/μs

V

R

= 100V, V

GE

= 0V

ISOPLUS i4-Pak

TM

(HV) Outline

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

IXBF12N300

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

0 0.5 1 1.5 2 2.5 3 3.5 4

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

10V

15V

20V

5V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

4

8

12

16

20

24

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 24A

I

C

= 12A

I

C

= 6A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

5 7 9 1113151719212325

V

GE

- Volts

V

CE

- Volts

I

C

= 24A

T

J

= 25ºC

6A

12A

Fig. 6. Input Admittance

0

4

8

12

16

20

24

28

32

36

40

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXBF12N300

IXBF12N300

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