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IXTX32P60P

P1-P3P4-P5
IXTK32P60P
IXTX32P60P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input Admittance
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
60
-50-45-40-35-30-25-20-15-10-50
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-3.6-3.2-2.8-2.4-2.0-1.6-1.2-0.8
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 300V
I
D
= -16A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
100µs
R
DS(on)
Limit
-
-
--
DC, 100ms
-
-
1ms
10ms
-
© 2008 IXYS CORPORATION, All rights reserved
IXTK32P60P
IXTX32P60P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_32P60P(B9) 6-03-08
P1-P3P4-P5

IXTX32P60P

Mfr. #:
Buy IXTX32P60P
Manufacturer:
Littelfuse
Description:
MOSFET -32 Amps -600V 0.350 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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