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Document Number: 65579
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ720DT
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=10V thru 4 V
V
GS
=3V
V
GS
=2V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.0040
0.0045
0.0050
0.0055
0.0060
0.0065
0.0070
0.0075
0.0080
0 10203040506070
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0918 27 36 45
V
DS
=20V
I
D
=20A
V
DS
=16V
V
DS
=5V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
600
1200
1800
2400
3000
0 5 10 15 20
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
I
D
=20A
V
GS
=4.5V
V
GS
=10V
T
J
-Junction Temperature (°C)
(Normalized)- On-Resistance
R
DS(on)