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IXDD408SI

P1-P3P4-P6P7-P9P10-P10
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes.
• Latch Up Protected
• High Peak Output Current: 8A Peak
• Operates from 4.5V to 25V
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 2500pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Limiting di/dt under Short Circuit
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
First Release
Copyright © IXYS CORPORATION 2001 Patent Pending
General Description
The IXDD408 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and
IGBTs to their minimum switching time and maximum
practical frequency limits. The IXDD480 can source and
sink 8A of peak current while producing voltage rise and
fall times of less than 30ns. The input of the driver is
compatible with TTL or CMOS and is fully immune to
latch up over the entire operating range. Designed with
small internal delays, cross conduction/current shoot-
through is virtually eliminated in the IXDD408. Its features
and wide safety margin in operating voltage and power
make the IXDD408 unmatched in performance and value.
The IXDD408 incorporates a unique ability to disable the
output under fault conditions. When a logical low is
forced into the Enable input, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD408 enters a tristate mode
and achieves a Soft Turn-Off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage
that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage tran-
sient.
The IXDD408 is available in the standard 8-pin P-DIP (PI),
SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263 (YI)
surface-mount package.
Figure 1 - Functional Diagram
IXDD408PI / 408SI / 408YI / 408CI
8 Amp Low-Side Ultrafast MOSFET Driver
2
IXDD408PI/408SI//408YI/408CI
Unless otherwise noted, T
A
= 25
o
C, 4.5V ≤ V
CC
≤ 25V .
All voltage measurements with respect to GND. IXDD408 configured as described in Test Conditions.
Electrical Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage 3.5 V
V
IL
Low input voltage 0.8 V
V
IN
Input voltage range -5 V
CC
+ 0.3 V
I
IN
Input current
0V
≤
V
IN
≤
V
CC
-10 10
µ
A
V
OH
High output voltage V
CC
- 0.025 V
V
OL
Low output voltage 0.025 V
R
OH
Output resistance
@ Output high
I
OUT
= 10mA, V
CC
= 18V
0.8 1.5
Ω
R
OL
Output resistance
@ Output Low
I
OUT
= 10mA, V
CC
= 18V 0.8 1.5
Ω
I
PEAK
Peak output current V
CC
is 18V
8 A
I
DC
Continuous output
current
Limited by package power
dissipation
2 A
V
EN
Enable voltage range - .3 Vcc + 0.3 V
V
ENH
High En Input Voltage 2/3 Vcc V
V
ENL
Low En Input Voltage 1/3 Vcc V
t
R
Rise time C
L
=2500pF Vcc=18V 12 14 18 ns
t
F
Fall time C
L
=2500pF Vcc=18V 13 15 19 ns
t
ONDLY
On-time propagation
delay
C
L
=2500pF Vcc=18V 37 38 42 ns
t
OFFDLY
Off-time propagation
delay
C
L
=2500pF Vcc=18V 32 34 38 ns
t
ENOH
Enable to output high
delay time
Vcc=18V 52 ns
t
DOLD
Disable to output low
Disable delay time
Vcc=18V 30 ns
V
CC
Power supply voltage 4.5 18 25 V
I
CC
Power supply current V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
1
0
3
10
10
mA
µ
A
µ
A
Absolute Maximum Ratings (Note 1)
Parameter Value
Supply Voltage 25 V
All Other Pins -0.3 V to V
CC
+ 0.3 V
Power Dissipation, T
AMBIENT
≤25
o
C
8 Pin PDIP (PI) 975mW
8 Pin SOIC (SI) 1055mW
TO220 (CI), TO263 (YI) 17W
Derating Factors (to Ambient)
8 Pin PDIP (PI)
7.6mW/
o
C
8 Pin SOIC (SI)
8.2mW/
o
C
TO220 (CI), TO263 (YI)
0.14W/
o
C
Storage Temperature
-65
o
C to 150
o
C
Lead Temperature (10 sec)
300
o
C
Operating Ratings
Parameter Value
Maximum Junction Temperature
150
o
C
Operating Temperature Range
-40
o
C to 85
o
C
Thermal Impedance (Junction To Case)
TO220 (CI), TO263 (YI) (θ
JC
)
0.95
o
C/W
Specifications Subject To Change Without Notice
3
IXDD408PI/408SI/408YI/408CI
Pin Description
SYMBOL FUNCTION DESCRIPTION
VCC Supply Voltage
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 25V.
IN Input Input signal-TTL or CMOS compatible.
EN Enable
The system enable pin. This pin, when driven low, disables the chip,
forcing high impedance state to the output.
OUT Output
Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
GND Ground
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
Figure 2 - Characteristics Test Diagram
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.
V
IN
VCC
IN
EN
GND
VCC
OUT
GND
OUT
1
2
3
4
8
7
6
5
I
X
D
D
4
0
8
8 PIN DIP (PI)
SO8 (SI)
TO220 (CI)
TO263 (YI)
IXDD408YI
IXDD408CI
Vcc
OUT
GND
IN
EN
1
2
3
4
5
Pin Configurations
P1-P3P4-P6P7-P9P10-P10

IXDD408SI

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Description:
IC MOSFET DRIVER LS 8A SGL 8SOIC
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