TLP759(D4-LF1,J,F)

TLP759
2015-11-30
1
TOSHIBA Photocoupler GaAAs Ired+PhotoIC
TLP759
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Industrial Inverter
The TOSHIBA TLP759 consists of a GaAAs highoutput light emitting
diode and a high speed detector of one chip photo diodetransistor. This
unit is 8-le a d D I P.
TLP759 has no internal base connection, and a Faraday shield integrated
on the photodetector chip provides an effective common mode noise
transient immunity.
So this is suitable for application in noisy environmental condition.
Isolation voltage: 5000 Vrms (min)
Switching speed: t
pHL
= 0.2μs (typ.)
t
pLH
= 0.3μs (typ.) (R
L
=1.9 kΩ)
TTL compatible
UL Approved: UL1577, file No. E67349
c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Option (D4) type
VDE Approved: DIN EN 60747-5-5 (Note 1)
Note 1: When a EN 60747-5-5 approved type is needed,
please designate the Option (D4)
Mechanical Parameters
Creepage distance: 7.0 mm (min)
Clearance: 7.0 mm (min)
Insulation thickness: 0.4 mm (min)
Pin Configuration
(top view)
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: Emitter(gnd)
6: Collector(output)
7: N.C.
8: Vcc
7
8
6
2
1
3
4
5
SHIELD
Schematic
8
6
2
3
V
O
5
Shield
GND
V
CC
I
O
I
CC
V
F
I
F
TOSHIBA
1110C4
Weight: 0.54 g (typ.)
Unit: mm
Start of commercial production
1993-01
TLP759
2015-11-30
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current I
F
25 mA
Forward current derating (Ta 70°C) IF / Ta -0.8 mA / °C
Pulse forward current (Note 1) I
FP
50 mA
Peak transient forward current (Note 2) I
FPT
1 A
Reverse voltage V
R
5 V
Diode power dissipation (Note 3) P
D
45 mW
Detector
Output current I
O
8 mA
Peak output current I
OP
16 mA
Output voltage V
O
0.5 to 20 V
Supply voltage V
CC
0.5 to 30 V
Output power dissipation P
O
100 mW
Output power dissipation derating (Ta 70°C) Po / Ta -2 mW / °C
Operating temperature range T
opr
55 to 100 °C
Storage temperature range T
stg
55 to 125 °C
Lead solder temperature (10 s) (Note 4) T
sol
260 °C
Isolation voltage (AC, 60 s, R.H. 60%) (Note 5) BV
S
5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(Note 1) 50% duty cycle, 1 ms pulse width. Derate 1.6mA / °C above 70°C.
(Note 2) Pulse width 1μs, 300pps.
(Note 3) Derate 0.9mW / °C above 70°C.
(Note 4) Soldering portion of lead: Up to 2mm from the body of the device.
(Note 5) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
TLP759
2015-11-30
3
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LDE
Forward voltage V
F
I
F
= 16mA 1.65 1.85 V
Forward voltage
temperature coefficient
ΔV
F
/ ΔTa I
F
= 16mA 2 mV C
Reverse current I
R
V
R
= 5V 10 μA
Capacitance between terminals C
T
V = 0 V, f = 1MHz 45 pF
Detector
High level output current
I
OH (1)
I
F
= 0mA, V
CC
= V
O
= 5.5V 3 500 nA
I
OH (2)
I
F
= 0mA, V
CC
= 30V, V
O
= 20V 5
μA
I
OH
I
F
= 0mA, V
CC
= 30V, V
O
= 20V
Ta = 70°C
50
High level supply voltage I
CCH
I
F
= 0mA, V
CC
= 30V 0.01 1 μA
Coupled
Current transfer ratio I
O
/ I
F
I
F
= 16mA, V
CC
= 4.5V
V
O
= 0.4V
20 40 %
Low level output voltage V
OL
I
F
= 16mA, V
CC
= 4.5V
I
O
= 2.4 mA
0.4 V
Resistance (inputoutput) R
S
R.H. 60%, V
S
= 500V (Note 1) 1×10
12
10
14
Ω
Capacitance (inputoutput) C
S
V
S
= 0 V, f = 1MHz (Note 1) 0.8 pF
Isolation voltage BV
S
AC, 60 s 5000
Vrms
AC, 1 s, in oil 10000
DC, 60 s, in oil 10000 Vdc
(Note 1) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
Switching Characteristics
(Ta = 25°C, VCC = 5V)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Propagation delay time
(H L)
t
pHL
1
I
F
= 0 16mA,
R
L
= 1.9kΩ
0.2 0.8 μs
Propagation delay time
(L H)
t
pLH
I
F
= 16 0mA,
RL = 1.9kΩ
0.3 0.8 μs
Common mode transient immunity
at logic high output (Note 1)
CM
H
2
I
F
= 0mA, V
CM
= 400V
pp
R
L
= 4.1kΩ
5000 10000 V / μs
Common mode transient immunity
at logic low output (Note 1)
CM
L
I
F
= 16mA, V
CM
= 400V
pp
R
L
= 4.1kΩ
5000
10000
V / μs
(Note 1) CM
L
is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in
the logic low state (V
O
< 0.8V).
CM
H
is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state (V
O
> 2.0V).

TLP759(D4-LF1,J,F)

Mfr. #:
Manufacturer:
Toshiba
Description:
High Speed Optocouplers Photocoupler, Photo IC Output
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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